Auger recombination in the electron-hole drops IN Si and Ge

  • Klaus Betzler
Electron-hole Drops
Part of the Lecture Notes in Physics book series (LNP, volume 57)


Luminescence measurements on Si and Ge at temperatures of about 1.5 K are presented, which indicate that Auger recombination is the main recombination process inside the electron-hole drops (EHD) in both materials. In silicon a broad spectrum near 2 Eg due to Auger- excited hot electrons could be detected. From its intensity, an Auger lifetime can be derived which corresponds to the total EHD lifetime. In germanium, the evaluation of magnetooscillation in the luminescence intensity yields a quantum efficiency of only 25% and leads to the conclusion that 75% of the carriers inside the EHD recombine in Auger processes.


Luminescence Intensity Radiative Recombination Auger Recombination Luminescence Measurement GaAs Laser 
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Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • Klaus Betzler
    • 1
  1. 1.Universität OsnabrückGermany

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