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Physics of Highly Excited States in Solids pp 201–210Cite as

Thermodynamical approach to the highly excited

  • Electron-hole Drops
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Part of the book series: Lecture Notes in Physics ((LNP,volume 57))

Abstract

In order to understand a general trend of the photoconductivity in a highly excited state of semiconductors, the determination of carrier density against the total excitation has been carried out in a relatively low density region where electrons, holes and excitons coexist. The assumption of chemical equilibrium among electrons, holes and excitons enables one to determine the density of charge carriers. The variation of binding energy of an exciton with the excitation density is taken into account. Carrier density appears to increase abruptly at a certain critical region of total excitation density.

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References

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Authors and Affiliations

  1. Department of Applied Physics, Tohoku University, Sendai, Japan

    Tomitaro Nagashima, Takeshi Watanabe & Chuji Horie

Authors
  1. Tomitaro Nagashima
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  2. Takeshi Watanabe
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  3. Chuji Horie
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© 1976 Springer-Verlag

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Nagashima, T., Watanabe, T., Horie, C. (1976). Thermodynamical approach to the highly excited. In: Physics of Highly Excited States in Solids. Lecture Notes in Physics, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-07991-2_90

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  • DOI: https://doi.org/10.1007/3-540-07991-2_90

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-07991-0

  • Online ISBN: 978-3-540-37975-1

  • eBook Packages: Springer Book Archive

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