Stimulated emission in layer-type semiconductors

  • Y. Nishina
  • N. Kuroda
  • M. Yashiro
  • K. Nakaoka
  • T. Goto
Stimulated Photoluminescence
Part of the Lecture Notes in Physics book series (LNP, volume 57)


Stimulated photoluminescent spectra of several kinds of layer-type semiconductors, GaSe1-xSx, HgI2 and PbI2 have been measured at liq. N2 and He temperatures.In GaSe, the nonlinear emission may be explained in terms of the Auger-type interactions between the direct exciton and the indirect one with their holes in common in the center of the Brillouin zone. The stimulated photoluminescence due to annihilation of excitonic molecule is found in HgI2 at liq. He temperature. The gain spectrum for the nonlinear emission in 12R-type PbI2 is compared with Haug's model of the exciton-LO-phonon interaction.


Excitation Intensity Free Exciton Gain Coefficient Gain Spectrum Exciting Beam 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1).
    Y. Kuramoto and H. Kamimura: J. Phys. Soc. Japan 37 (1974) 716. Also see their paper in this volume.Google Scholar
  2. 2).
    N. Kuroda, T. Nakanomyo and Y. Nishina: J. Japan Soc. appl. Phys. 43 suppl. (1974) 63.Google Scholar
  3. 3).
    R. E. Nahory, K. L. Shaklee, R. F. Leheny and J. C. DeWinter: Solid State Commun. 9 (1971) 1107.Google Scholar
  4. 4).
    T. Ugumori, K. Masuda and S. Namba: Solid State Commun. 12 (1973) 389.Google Scholar
  5. 5).
    A. Mercier and J. P. Voitchovsky: Phys. Rev. 11B (1975) 2243.Google Scholar
  6. 6).
    N. Kuroda and Y. Nishina: Phys. Status solidi (b) 72 (1975) 81.Google Scholar
  7. 7).
    N. Kuroda and Y. Nishina: Il Nuovo Cimento 32 B (1976) 109.Google Scholar
  8. 8).
    N. Kuroda and Y. Nishina: Suppl. Progr. theor. Phys. No. 57 (1975) 51.Google Scholar
  9. 9).
    K. Aoyagi, A. Misu, G. Kuwabara, Y. Nishina, S. Kurita, T. Fukuroi, O. Akimoto, H. Hasegawa, M. Shinada and S. Sugano: Proc. Int. Conf. Phys. Semicond., Kyoto 1966. ed. G. M. Hatoyama (Phys. Soc. Japan Tokyo, 1966) p.174.Google Scholar
  10. 10).
    T. Kushida and T. Moriya: See this volume.Google Scholar
  11. 11).
    J. L. Brebner, S. Jandl, and B. M. Powell: Solid State Commun. 13 (1973) 1555.Google Scholar
  12. 12).
    N. Kuroda, Y. Nishina and T. Fukuroi: J. Phys. Soc. Japan 28 (1970) 981.Google Scholar
  13. 13).
    Y. Nishina: Lecture Notes, Int. Conf. on Appl. High Magnetic Fields in Semicond, Würzburg, 1974, Part 2, ed. G. Landwehr (Physikalisches Institut, Würzburg, 1975) p.64.Google Scholar
  14. 14).
    N. Kuroda and Y. Nishina: J. Luminescence 12/13 (1976) 623.Google Scholar
  15. 15).
    C. Benoît à la Guillaume, J. M. Debever and F. Salvan: Proc. Int. Conf. Phys. Semicond., Moscow, 1968 ed. S. M. Ryvkin (Nauka, Leningrad, 1968) p. 581.Google Scholar
  16. 16).
    K. Kanzaki and I. Imai: J. Phys. Soc. Japan 32 (1972) 1003.Google Scholar
  17. 17).
    B. V. Novikov and M. M. Pimonenko: Sov. Phys.-Semicond. 6 (1972) 671.Google Scholar
  18. 18).
    K. Nakaoka, T. Goto and Y. Nishina: to be published.Google Scholar
  19. 19).
    T. Goto, K. Nakaoka and Y. Nishina: J. Luminescence 12/13 (1976) 599.Google Scholar
  20. 20).
    M. Yashiro, T. Goto and Y. Nishina: Solid State Commun. 17 (1975) 765.Google Scholar
  21. 21).
    H. Haug: J. appl. Phys. 39 (1968) 4687.Google Scholar

Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • Y. Nishina
    • 1
  • N. Kuroda
    • 1
  • M. Yashiro
    • 1
  • K. Nakaoka
    • 1
  • T. Goto
    • 1
  1. 1.Research Institute for Iron, Steel and Other MetalsTohoku UniversitySendaiJapan

Personalised recommendations