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Stimulated emission in layer-type semiconductors

  • Y. Nishina
  • N. Kuroda
  • M. Yashiro
  • K. Nakaoka
  • T. Goto
Stimulated Photoluminescence
Part of the Lecture Notes in Physics book series (LNP, volume 57)

Abstract

Stimulated photoluminescent spectra of several kinds of layer-type semiconductors, GaSe1-xSx, HgI2 and PbI2 have been measured at liq. N2 and He temperatures.In GaSe, the nonlinear emission may be explained in terms of the Auger-type interactions between the direct exciton and the indirect one with their holes in common in the center of the Brillouin zone. The stimulated photoluminescence due to annihilation of excitonic molecule is found in HgI2 at liq. He temperature. The gain spectrum for the nonlinear emission in 12R-type PbI2 is compared with Haug's model of the exciton-LO-phonon interaction.

Keywords

Excitation Intensity Free Exciton Gain Coefficient Gain Spectrum Exciting Beam 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • Y. Nishina
    • 1
  • N. Kuroda
    • 1
  • M. Yashiro
    • 1
  • K. Nakaoka
    • 1
  • T. Goto
    • 1
  1. 1.Research Institute for Iron, Steel and Other MetalsTohoku UniversitySendaiJapan

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