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Organic Electronics pp 189–212Cite as

Organic Field-Effect Transistors for CMOS Devices

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Part of the book series: Advances in Polymer Science ((POLYMER,volume 223))

Abstract

Organic field-effect transistors (OFETs) are the key elements of future low cost electronics such as radio frequency identification tags. In order to take full advantage of organic electronics, low power consumption is mandatory, requiring the use of a complementary metal oxide semiconductor (CMOS) like technique. To realize CMOS-devices p-type and n-type organic field-effect transistors on one substrate have to be provided. Here, the latest concepts to produce in a straightforward way complementary acting OFETs for CMOS-like elements are illustrated on basis of the inverter. Starting from a simple description of thin-film transistors, the basic design rules for the development of complementary OFETs are given and some realizations of CMOS-like inverters are discussed. A CMOS-like inverter based on two identical field-effect transistors disclosing almost unipolar p-type and n-type behavior is presented.

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Acknowledgments

The authors thank the Deutsche Forschungsgemeinschaft (DFG) and the Bundesministerium für Bildung und Forschung (BMBF) for funding.

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Authors and Affiliations

  1. Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 23, 64287, Darmstadt, Germany

    Christian Melzer & Heinz von Seggern

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  1. Christian Melzer
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Correspondence to Heinz von Seggern .

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  1. Inst. Mikroelektronik, TU Wien, Gußhausstraße 27-29, Wien, 1040, Austria

    Tibor Grasser

  2. Inst. Mikroelektronik, TU Wien, Gußhausstraße 27-29, Wien, 1040, Austria

    Gregor Meller

  3. Inst. Mikroelektronik, TU Wien, Gußhausstraße 27-29, Wien, 1040, Austria

    Ling Li

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Melzer, C., Seggern, H.v. (2009). Organic Field-Effect Transistors for CMOS Devices. In: Grasser, T., Meller, G., Li, L. (eds) Organic Electronics. Advances in Polymer Science, vol 223. Springer, Berlin, Heidelberg. https://doi.org/10.1007/12_2009_9

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