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Growth of Oxides with Complex Stoichiometry by the ALD Technique, Exemplified by Growth of La1–x Ca x MnO 3

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Rare Earth Oxide Thin Films

Part of the book series: Topics in Applied Physics ((TAP,volume 106))

Abstract

To grow films with a complex stoichiometry by the ALD approach has long been regarded as a complicated task and hitherto not pursued to a large extent. This review will cover some of the milestones on the way to controlled deposition of compounds with intricate stoichiometry with the ALD technique. The survey shows that some of the foreseen obstacles might not necessarily be that severe. The growth of films of La1–x Ca x MnO3 will be used as a model to describe the process for growth of oxides with complex composition, and a mathematical model to predict the deposited stoichiometry is advanced. It is shown that the ALD window found for deposition of MnO2 is extended to higher temperatures when Ca and/or La is present on the film surface.

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References

  • M. Leskelä, M. Ritala: Atomic layer deposition (ALD): from precursors to thin film structures, Thin Solid Films 409, 138 (2002)

    Article  Google Scholar 

  • L. Niinistö, J. Päiväsaari, J. Niinistö, M. Putkonen, M. Nieminen: Advanced electronic and optoelectronic materials by atomic layer deposition: an overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials, Phys. Stat. Solidi A 201, 1443 (2004)

    Article  CAS  Google Scholar 

  • M. Ritala, M. Leskelä: Atomic layer deposition, in H. S. Nalwa (Ed.): Handbook of thin film materials, vol. 1 (Academic Press, San Diego, CA 2002) p. 103

    Google Scholar 

  • T. Hatanpaeae, M. Vehkamaeki, I. Mutikainen, J. Kansikas, M. Ritala, M. Leskelä: Synthesis and characterisation of cyclopentadienyl complexes of barium: precursors for atomic layer deposition of BaTiO3, Dalton Trans. 8, 1181 (2004)

    Article  CAS  Google Scholar 

  • M. Ritala, K. Kukli, M. Vehkamaki, T. Hanninen, T. Hatanpaa, P. I. Raisanen, M. Leskelä: Atomic layer deposition of high-k oxides, Proc. Electrochem. Soc. 2000-13, 597 (2000)

    CAS  Google Scholar 

  • M. Vehkamaki, T. Hatanpää, T. Hänninen, M. Ritala, M. Leskelä: Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition, Electrochem. Solid-State Lett. 2, 504 (1999)

    Article  CAS  Google Scholar 

  • R. J. Potter, P. A. Marshall, J. L. Roberts, A. C. Jones, P. R. Chalker, M. Vehkamaeki, M. Ritala, M. Leskelä, P. A. Williams, H. O. Davies, N. L. Tobin, L. M. Smith: Liquid injection MOCVD and ALD studies of ``single source'' Sr–Nb and Sr–Ta precursors, Mater. Res. Soc. Symp. Proc. 784, 97 (2004)

    Google Scholar 

  • M. Vehkamaki, M. Ritala, M. Leskelä, A. C. Jones, H. O. Davies, T. Sajavaara, E. Rauhala: Atomic layer deposition of strontium tantalate thin films from bimetallic precursors and water, J. Electrochem. Soc. 151, F69 (2004)

    Article  CAS  Google Scholar 

  • Y. J. Cho, Y.-S. Min, J.-H. Lee, B.-S. Seo, J. K. Lee, Y. S. Park, J.-H. Choi: Atomic layer deposition (ALD) of bismuth titanium oxide thin films using direct liquid injection (DLI) method, Integr. Ferroelectr. 59, 1483 (2003)

    CAS  Google Scholar 

  • M. Schuisky, K. Kukli, M. Ritala, A. Harstå, M. Leskelä: Atomic layer CVD in the Bi–Ti–O system, Chem. Vap. Dep. 6, 139 (2000)

    Article  CAS  Google Scholar 

  • O. Nilsen, A. Kjekshus, H. Fjellvåg: to be published

    Google Scholar 

  • M. Ritala, K. Kukli, A. Rahtu, P. I. Raisanen, M. Leskelä, T. Sajavaara, J. Keinonen: Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources, Science 288, 319 (2000)

    Article  CAS  Google Scholar 

  • M. Nieminen, T. Sajavaara, E. Rauhala, M. Putkonen, L. Niinistö: Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy, J. Mater. Chem. 11, 2340 (2001)

    Article  CAS  Google Scholar 

  • H. Seim, M. Nieminen, L. Niinistö, H. Fjellvåg, L.-S. Johansson: Growth of LaCoO3 thin films from β-diketonate precursors, Appl. Surf. Sci. 112, 243 (1997)

    Article  CAS  Google Scholar 

  • M. Ritala, P. Kalsi, D. Riihelä, K. Kukli, M. Leskelä, J. Jokinen: Controlled growth of TaN, Ta3N5, and TaOxNy thin films by atomic layer deposition, Chem. Mater. 11, 1712 (1999)

    Article  CAS  Google Scholar 

  • M. Lie, A. Kjekshus, H. Fjellvåg: Growth of Pe2O3 thin films by atomic layer deposition, Thin Solid Films 488, 74 (2005)

    Article  CAS  Google Scholar 

  • J.-S. Min, H.-S. Park, S.-W. Kang: Metalorganic atomic-layer deposition of titanium nitride silicide films, Appl. Phys. Lett. 75, 1521 (1999)

    Article  CAS  Google Scholar 

  • J.-S. Min, H.-S. Park, W. Koh, S.-W. Kang: Chemical vapor deposition of Ti–Si–N films with alternating source supply, Mater. Res. Soc. Symp. Proc. 564, 207 (1999)

    CAS  Google Scholar 

  • M. Nieminen, S. Lehto, L. Niinistö: Atomic layer epitaxy growth of LaGaO3 thin films, J. Mater. Chem. 11, 3148 (2001)

    Article  CAS  Google Scholar 

  • O. Nilsen, M. Peussa, H. Fjellvåg, L. Niinistö, A. Kjekshus: Thin film deposition of lanthanum manganite perovskite by the ALE process, J. Mater. Chem. 9, 1781 (1999)

    Article  CAS  Google Scholar 

  • K. Kukli, M. Peussa, L.-S. Johansson, E. Nykanen, L. Niinistö: Controlled growth of yttrium oxysulphide thin films by atomic layer deposition, Mater. Sci. Forum 315-317, 216 (1999)

    Article  CAS  Google Scholar 

  • H. Seim, H. Molsa, M. Nieminen, H. Fjellvåg, L. Niinistö: Deposition of LaNiO3 thin films in an atomic layer epitaxy reactor, J. Mater. Chem. 7, 449 (1997)

    Article  CAS  Google Scholar 

  • B. W. Sanders, A. Kitai: Zinc oxysulfide thin films grown by atomic layer deposition, Chem. Mater. 4, 1005 (1992)

    Article  CAS  Google Scholar 

  • D.-S. Kil, J. M. Lee, J.-S. Roh: Low-temperature ALD growth of SrTiO3 thin films from Sr β-diketonates and Ti alkoxide precursors using oxygen remote plasma as an oxidation source, Chem. Vap. Dep. 8, 195 (2002)

    Article  CAS  Google Scholar 

  • A. Kosola, M. Putkonen, L.-S. Johansson, L. Niinistö: Effect of annealing in processing of strontium titanate thin films by ALD, Appl. Surf. Sci. 211, 102 (2003)

    Article  CAS  Google Scholar 

  • O. S. Kwon, S. K. Kim, M. Cho, C. S. Hwang, J. Jeong: Chemically conformal ALD of SrTiO3 thin films using conventional metallorganic precursors, J. Electrochem. Soc. 152, C229 (2005)

    Article  CAS  Google Scholar 

  • S. W. Lee, O. S. Kwon, C. S. Hwang: Chemically conformal deposition of SrTiO3 thin films by atomic layer deposition using conventional metal organic precursors and remote-plasma activated H2O, Microelectron. Eng. 80, 158 (2005)

    Article  CAS  Google Scholar 

  • M. Vehkamaki, T. Hanninen, M. Ritala, M. Leskelä, T. Sajavaara, E. Rauhala, J. Keinonen: Atomic layer deposition of SrTiO3 thin films from a novel strontium precursor – strontium bis(tri-isopropylcyclopentadienyl), Chem. Vap. Dep. 7, 75 (2001)

    Article  CAS  Google Scholar 

  • K. Kukli, H. Heikkinen, E. Nykanen, L. Niinistö: Deposition of lanthanum sulfide thin films by atomic layer epitaxy, J. Alloys Comp. 275–277, 10 (1998)

    Article  Google Scholar 

  • M. Lie, A. Kjekshus, H. Fjellvåg: to be published

    Google Scholar 

  • N. Tsuboi, T. Isu, N. Kakuda, T. Terasako, S. Iida: Vapor-phase atomic layer epitaxy of CuGaS2 at atmospheric pressure using metal chlorides and H2S, Jpn. J. Appl. Phys. Part 2 33, L244 (1994)

    Article  CAS  Google Scholar 

  • V. E. Drozd, A. A. Tulub, V. B. Aleskovski, Korol'kov: Synthesis of oxide superalloys by ML-ALE method, Appl. Surf. Sci. 82-83, 587 (1994)

    Article  Google Scholar 

  • M. Nanu, L. Reijnen, B. Meester, J. Schoonman, A. Goossens: CuInS2 thin films deposited by ALD, Chem. Vap. Dep. 10, 45 (2004)

    Article  CAS  Google Scholar 

  • J. Ihanus, M. Ritala, M. Leskelä: ALE growth of SrS1-xSex thin films by substituting surface sulfur with elemental selenium, Proc. Electrochem. Soc. 25, 1423 (1997)

    Google Scholar 

  • J. Ihanus, E. Lambers, P. H. Holloway, M. Ritala, M. Leskelä: XPS and electroluminescence studies on SrS1-xSex and ZnS1-xSex thin films deposited by atomic layer deposition technique, J. Cryst. Growth 260, 440 (2004)

    Article  CAS  Google Scholar 

  • C.-T. Hsu: Epitaxial growth of II–VI compound semiconductors by atomic layer epitaxy, Thin Solid Films 335, 284 (1998)

    Article  CAS  Google Scholar 

  • C.-T. Hsu: Variation with composition of the properties in ZnSxSe1-x, J. Cryst. Growth 193, 33 (1998)

    Article  CAS  Google Scholar 

  • C.-T. Hsu: Growth of ZnSxSe1-x layers on Si substrates by atomic layer epitaxy, Mater. Chem. Phys. 58, 6 (1999)

    Article  CAS  Google Scholar 

  • J. Ihanus, M. Ritala, M. Leskelä, Rauhala: ALE growth of ZnS1-xSex thin films by substituting surface sulfur with elemental selenium, Appl. Surf. Sci. 112, 154 (1997)

    Article  CAS  Google Scholar 

  • H. Ikeda, Y. Miura, N. Takahashi, A. Koukitu, H. Seki: Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy, Appl. Surf. Sci. 82–83, 257 (1994)

    Article  Google Scholar 

  • T. Taki, T. Nakajima, A. Koukitu, H. Seki: Substitution reaction of surface adsorbed P atoms to As atoms in the GaP/GaAs atomic layer epitaxy, J. Cryst. Growth 183, 75 (1998)

    Article  CAS  Google Scholar 

  • Y.-S. Min, Y. J. Cho, C. S. Hwang: Amorphous high k dielectric Bi1-x-yTixSiyOz thin films by ALD, Electrochem. Solid-State Lett. 7, F85 (2004)

    Article  CAS  Google Scholar 

  • Y.-S. Min, Y. J. Cho, I. P. Asanov, J. H. Han, W. D. Kim, C. S. Hwang: Bi1-x-yTixSiyOz (BTSO) thin films for dynamic random access memory capacitor applications, Chem. Vap. Dep. 11, 38 (2005)

    Article  CAS  Google Scholar 

  • W. C. Shin, S. O. Ryu, I. K. You, S. M. Yoon, S. M. Cho, N. Y. Lee, K. D. Kim, B. G. Yu, W. J. Lee, K. J. Choi, S. G. Yoon: Low voltage switching characteristics of 60thick SrBi2Ta2O9 thin films deposited by plasma-enhanced ALD, Electrochem. Solid-State Lett. 7, F31 (2004)

    Article  CAS  Google Scholar 

  • R. J. Potter, P. R. Chalker, T. D. Manning, H. C. Aspinall, Y. F. Loo, A. C. Jones, L. M. Smith, G. W. Critchlow, M. Schumacher: Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques, Chem. Vap. Dep. 11, 159 (2005)

    Article  CAS  Google Scholar 

  • W. Prellier, P. Lecoeur, B. Mercey: Colossal magnetoresistive manganite thin films, J. Phys. Condens. Matter 13, R915 (2001)

    Article  CAS  Google Scholar 

  • J. Z. Sun, L. Krusin-Elbaum, A. Gupta, G. Xiao, P. R. Duncombe, S. S. P. Parkin: Magnetotransport in doped manganate perovskites, IBM J. Res. Dev. 42, 89 (1998)

    Article  CAS  Google Scholar 

  • J. M. D. Coey, M. Viret, S. Von Molnar: Mixed-valence manganites, Adv. Phys. 48, 167 (1999)

    Article  CAS  Google Scholar 

  • E. Dagotto, T. Hotta, A. Moreo: Colossal magnetoresistant materials: the key role of phase separation, Phys. Rep. 344, 1 (2001)

    Article  CAS  Google Scholar 

  • L. P. Gor'kov, V. Z. Kresin: Mixed-valence manganites: fundamentals and main properties, Phys. Rep. 400, 149 (2004)

    Article  CAS  Google Scholar 

  • A. M. Haghiri-Gosnet, J. P. Renard: CMR manganites: physics, thin films and devices, J. Phys. D Appl. Phys. 36, R127 (2003)

    Article  CAS  Google Scholar 

  • S. Jin, M. McCormack, T. H. Tiefel, R. Ramesh: Colossal magnetoresistance in La–Ca–Mn–O ferromagnetic thin films, J. Appl. Phys. 76, 6929 (1994)

    Article  CAS  Google Scholar 

  • E. L. Nagaev: Colossal-magnetoresistance materials: manganites and conventional ferromagnetic semiconductors, Phys. Rep. 346, 387 (2001)

    Article  CAS  Google Scholar 

  • L. Sheng, D. Y. Xing, D. N. Sheng, C. S. Ting: Theory of colossal magnetoresistance in R1-xAxMnO3, Phys. Rev. Lett. 79, 1710 (1997)

    Article  CAS  Google Scholar 

  • R. von Helmolt, J. Wecker, K. Samwer, K. Baerner: Transport properties of manganates with giant magnetoresistance, J. Magn. Magn. Mater. 151, 411 (1995)

    Article  Google Scholar 

  • O. Nilsen, A. Kjekshus, H. Fjellvåg: to be published

    Google Scholar 

  • O. Nilsen, H. Fjellvåg, A. Kjekshus: Growth of manganese oxide thin films by atomic layer deposition, Thin Solid Films 444, 44 (2003)

    Article  CAS  Google Scholar 

  • O. Nilsen, H. Fjellvåg, A. Kjekshus: Growth of calcium carbonate by the atomic layer chemical vapour deposition technique, Thin Solid Films 450, 240 (2004)

    Article  CAS  Google Scholar 

  • M. Ylilammi: Monolayer thickness in atomic layer deposition, Thin Solid Films 279, 124 (1996)

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Chemistry, University of Oslo, P.O. Box 1033 Blindern, N-0315, Oslo, Norway

    Ola Nilsen, Martin Lie, Helmer F. Fjellvåg & Arne Kjekshus

Authors
  1. Ola Nilsen
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  2. Martin Lie
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  3. Helmer F. Fjellvåg
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  4. Arne Kjekshus
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Marco Fanciulli Giovanna Scarel

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Nilsen, O., Lie, M., Fjellvåg, H.F., Kjekshus, A. Growth of Oxides with Complex Stoichiometry by the ALD Technique, Exemplified by Growth of La1–x Ca x MnO 3 . In: Fanciulli, M., Scarel, G. (eds) Rare Earth Oxide Thin Films. Topics in Applied Physics, vol 106. Springer, Berlin, Heidelberg . https://doi.org/10.1007/11499893_6

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