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Requirements of Oxides as Gate Dielectricsfor CMOS Devices

  • Gennadi Bersuker
  • Peter Zeitzoff
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 106)

Abstract

Analysis of fundamental material properties of the d-electron-based high-k dielectrics, which are under consideration for the application as gate dielectrics, indicates that this class of materials has serious limitations. However, the material intrinsic properties do not necessarily have to satisfy all performance requirements: certain properties can be modified by proper engineering. We formulate a technological approach to the requirements for gate dielectrics, which is specific to a given class of materials and aims to address negative aspects of intrinsic material properties.

Keywords

71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 

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Authors and Affiliations

  • Gennadi Bersuker
    • 1
  • Peter Zeitzoff
    • 1
  1. 1.SEMATECHAustin, TexasUSA

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