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Electronic Structure and Band Offsetsof Lanthanide Oxides

  • John Robertson
  • Ka Xiong
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 106)

Abstract

This paper reviews the bulk electronic structures of high dielectric constant oxides, particularly lanthanide oxides. The electronic structures are calculated with methods beyond local density formalism, in order to give correct band gaps and correct energies for f states. The band offsets for the oxide–Si interfaces are an important factor determining the leakage currents, and these are derived from calculations and compared to experimental values. The band offset values for lanthanide oxides are advantageous compared to those of other high-k oxides.

Keywords

71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f 

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Authors and Affiliations

  • John Robertson
    • 1
  • Ka Xiong
    • 1
  1. 1.Engineering DepartmentCambridge UniversityCambridgeUnited Kingdom

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