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Experimental Determination of the Band Offset of Rare Earth Oxides on Various Semiconductors

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Rare Earth Oxide Thin Films

Part of the book series: Topics in Applied Physics ((TAP,volume 106))

Abstract

The critical role of gate oxide in ultra-scaled devices is being investigated in terms of the properties of rare earth oxides as high dielectric constant (high-κ) materials to replace SiO2. In particular, the combination of rare earth oxides with high-mobility substrates, like Ge and GaAs, could offer the possibility to improve the interface properties. Among the different properties under investigation, the band alignment at the interface is a key issue because it affects the tunneling behavior of a device. Internal photoemission and X-ray photoelectron spectroscopy are useful techniques to experimentally determine the band offset at the semiconductor/oxide interface. After a detailed description of these two methods, we present a review of the data available in the literature on the interface of different high-κ oxides on silicon. Finally, we report our measurements of the Lu2O3 band alignment on various semiconductor substrates. A conduction band offset value of 2.1 eV has been obtained by internal photoemission for Lu2O3 films grown on Si, Ge, and GaAs. X-ray photoelectron spectroscopy measurements of the valence band offset were performed on Ge/Lu2O3 heterojunction. The results are in excellent agreement with those obtained using internal photoemission.

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Authors and Affiliations

  1. CNR-INFM MDM National Laboratory, Via C. Olivetti, 2, 20041, Agrate Brianza (MI), Italy

    Gabriele Seguini, Michele Perego & Marco Fanciulli

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  1. Gabriele Seguini
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  2. Michele Perego
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  3. Marco Fanciulli
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Marco Fanciulli Giovanna Scarel

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Seguini, G., Perego, M., Fanciulli, M. Experimental Determination of the Band Offset of Rare Earth Oxides on Various Semiconductors. In: Fanciulli, M., Scarel, G. (eds) Rare Earth Oxide Thin Films. Topics in Applied Physics, vol 106. Springer, Berlin, Heidelberg . https://doi.org/10.1007/11499893_16

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  • DOI: https://doi.org/10.1007/11499893_16

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