Abstract
In this Chapter, a scheme to enhance generation of terahertz radiation from semiconductor surfaces irradiated by femtosecond laser with an external magnetic field is described. The emitted terahertz radiation power from InAs is enhanced more than 2 orders by applying a magnetic field, and achieves approximately 100 μW.
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Ohtake, H., Ono, S., Sarukura, N. Enhanced Generation of Terahertz Radiation from Semiconductor Surfaces with External Magnetic Field. In: Sakai, K. (eds) Terahertz Optoelectronics. Topics in Applied Physics, vol 97. Springer, Berlin, Heidelberg. https://doi.org/10.1007/10828028_4
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DOI: https://doi.org/10.1007/10828028_4
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Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-20013-0
Online ISBN: 978-3-540-31488-2
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