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Atomic-layer Deposited Barrier and Seed Layers for Interconnects

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Book cover Materials for Information Technology

Part of the book series: Engineering Materials and Processes ((EMP))

Summary

A thin film with barrier property contained in damascene process flows prevents the conducting copper from mixing with the dielectric. Due to control of chemical reactions at the surface and its excellent step coverage, ALD has drawn considerable attention for this application. A significant amount of processes for transition metal nitrides and metal films have been developed, which are mostly based on thermal or plasma-enhanced ALD. Both of these techniques have benefits and drawbacks to guarantee a substrate compatible process, as well as a dense and sufficiently conductive material. The substrate sensitivity is inherent to the ALD processing technique. Preparing a substrate surface that shows high reactivity towards a given ALD process is crucial to guaranteeing an intact film with a low thickness of 5 nm or less. Transition metal nitrides are mainly considered as ALD layers with barrier property. ALD metal layers of cobalt and ruthenium are useful as barrier adhesion promoters. Ruthenium films are also potential Cu seed and direct plating materials.

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Author information

Authors and Affiliations

  1. IMEC, Leuven, Belgium

    J. Schuhmacher, A. Martina, A. Satta & K. Maexa

  2. ESAT Department K.U., Leuven, Belgium

    A. Martina & K. Maexa

Authors
  1. J. Schuhmacher
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  2. A. Martina
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  3. A. Satta
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  4. K. Maexa
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Editor information

Editors and Affiliations

  1. Materials Analysis Department, AMD Saxony Limited Liability Company & Co. KG, Wilschdorfer Landstraße 101, D-01109, Dresden, Germany

    Ehrenfried Zschech (Dr. rer. nat.) (Dr. rer. nat.)

  2. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    Caroline Whelan Ph.D.

  3. Flash Technology Predevelopment, Infineon Technologies SC300, Königsbrücker Straße 180, D-01099, Dresden, Germany

    Thomas Mikolajick (Dr.-Ing.) (Dr.-Ing.)

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© 2005 Springer-Verlag London Limited

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Schuhmacher, J., Martina, A., Satta, A., Maexa, K. (2005). Atomic-layer Deposited Barrier and Seed Layers for Interconnects. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_4

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  • DOI: https://doi.org/10.1007/1-84628-235-7_4

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-85233-941-8

  • Online ISBN: 978-1-84628-235-5

  • eBook Packages: EngineeringEngineering (R0)

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