Conclusions
Both Ta-Si-N and W-Si-N films have promising properties as diffusion barriers for copper metallization. For Ta-Si-N films with a silicon content of ∼ 20 at%, as an optimised system regarding thermal stability and high conductivity a composition containing ∼ 20 at% nitrogen was obtained. If the PVD techniques can be developed further to remain applicable for high aspect ratio structures, the PVD Ta-Si-N films are promising candidates for future technology nodes in semiconductor industry. Their integration behaviour for CVD and, in particular, ALD techniques has still to be investigated. The PE-CVD W-N barriers form amorphous barrier layers, which are expected to remain stable films for thicknesses down to 5 nm. Their thermal stability is slightly below that of PVD Ta-Si-N films, but can be improved by incorporation of silicon. Further optimisation of the ternary W-Si-N system is still ongoing.
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Hecker, M. et al. (2005). Advanced Barriers for Copper Interconnects. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_24
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