Abstract
A variety of magnetic random access memory (MRAM) technologies have been explored over a period of many decades. Their advantages include an unlimited number of read-write cycles, random access to any address, radiation-hardness, and non-volatility (namely, the state of the memory does not require periodic refreshing and is maintained even when power is removed from the memory).
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Wang, F.Z. (2006). Magnetic Random Access Memories for Computer Data Storage. In: Liu, Y., Sellmyer, D.J., Shindo, D. (eds) Handbook of Advanced Magnetic Materials. Springer, Boston, MA. https://doi.org/10.1007/1-4020-7984-2_40
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DOI: https://doi.org/10.1007/1-4020-7984-2_40
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4020-7983-2
Online ISBN: 978-1-4020-7984-9
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