Skip to main content

Nanolithography

  • Chapter
  • 2266 Accesses

Part of the book series: Nanostructure Science and Technology ((NST))

This is a preview of subscription content, log in via an institution.

Buying options

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   119.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD   159.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Semiconductor Industry Association (SIA), “International roadmap for Semiconductors 2002 update edition”, International SEMATECH, Austin, TX, 2003.

    Google Scholar 

  2. M. D. Levinson, Jpn. J. Appl. Phys., 33, 6765 (1994).

    Google Scholar 

  3. M. D. Levinson, N. S. Viswanathan, and R. A. Simpson, IEEE Trans. Electron Devices, Vol. ED-29, 1828 (1982).

    Google Scholar 

  4. I. C. Kizilyalli, G. P. Watson, R. A. Kohler, O. Nalamasu, and L. R. Harriott, Electron Devices Meeting, 2000. IEDM Technical Digest. International, 2000 Page(s): 829–832; H.-Y. Liu, L. Karklin, Y.-T. Wang, and Y. C. Pati. Proceedings of SPIE, 3334, p. 2 (1998); M. E. King, N. Cave, B. J. Falch, C.-C. Fu, K. Green, K. D. Lucas, B. J. Roman, A. Reich, J. L. Sturtevant, R. Tian, D. Russell, L. Karklin, and Y.-T. Wang, Proceedings of SPIE, 3679, p. 10 (1999).

    Google Scholar 

  5. M. D. Levenson, Proceedings of SPIE, 3051, p. 2 (1997).

    Google Scholar 

  6. K. Kamon, T. Miyamoto, Y. Myoi, H. Nagata, M. Tanaka, and K. Horie, Jpn. J. Appl. Phys. 30, 3012 (1991).

    Article  Google Scholar 

  7. W. T. Silvast and O. R. Wood II, Microelectronic Engineering, 8, 3 (1988); A. M. Hawryluk and L. G. Seppala, J. Vac. Sci. Technol. B6, 2162 (1988); C. W. Gwyn, R. Stulen, D. Sweeney, and D. Attwood, J. Vac. Sci. Tehnol. B16, 3142 (1998).

    Google Scholar 

  8. J. P. Silverman, J. Vac. Sci. Technol. B16, 3137 (1998).

    Google Scholar 

  9. R. Feynman, “There’s pleanty of room at the Bottom: an invitation to enter a new field of physics”, Talk at the annual meeting of the American Physical Society, 29 Dec. 1959. Reprinted in Engineering and Science 23, 22 (1960).

    Google Scholar 

  10. A. N. Broers and M. Hatzakis, Scientific American, 227, 33 (1972); D. R. Herriott, et al., IEEE Trans. Electron Devices, ED-29, 385 (1975).

    Google Scholar 

  11. E. Goto, T. Soma, and M. Idesawa, J. Vac. Sci. Technol. 15, 883 (1978); H. C. Pfeiffer, J. Vac. Sci. Technol. 15, 887 (1978); M. G. R. Thomson, R. J. Collier, and D. R. Herriott, J. Vac. Sci. Technol. 15, 891 (1978).

    Google Scholar 

  12. Y. Nakayama, et al., J. Vac. Sci. Technol. B8, 1836 (1990).

    Google Scholar 

  13. M. B. Heritage, J. Vac. Sci. Technol. 12, 1135 (1975).

    Article  Google Scholar 

  14. J. M. Gibson and S. D. Berger, Appl. Phys. Lett. 57, 153 (1990); L. R. Harriott, J. Vac. Sci. Technol. B15, 2130 (1997); H. C. Pfeiffer and W. Stickel, Microelectronic Engineering, 27, 143 (1995); H. C. Pfeiffer and W. Stickel, Proceedings of SPIE, 2522, 23 (1995).

    Article  Google Scholar 

  15. L. R. Harriott, S. D. Berger, J. A. Liddle, G. P. Watson, and M. M. Mkrtchyan, J. Vac. Sci. Technol. B13, 2404 (1995).

    Google Scholar 

  16. For a review of relevant sputtering mechanisms, see A. Benninghoven, F. G. Rudenauer, and H. W. Werner, Chapter 2 (John Wiley, New York, USA, 1987).

    Google Scholar 

  17. J. Melngailis, in SPIE Proceedings Vol. 1465, “Electron-Beam, X-Ray and Ion-Beam Submicrometer Lithographies for Manufacturing”, ed. M. C. Peckerar 36–49 (SPIE, Bellington, WA, 1991).

    Google Scholar 

  18. A. D. Dubner and A. Wagner, J. Appl. Phys. 66, 870–4 (1989).

    Article  CAS  Google Scholar 

  19. M. H. F. Overwijk and F. C. van den Heuvel, J. Appl. Phys. 74, 1762–9 (1993).

    CAS  Google Scholar 

  20. R. L. Kubena, F. P. Stratton, J. W. Ward, G. M. Atkinson, and R. J. Joyce, J. Vac. Sci. Technol. B7, 1798–801 (1989).

    Google Scholar 

  21. See, for example, A. Moser, C. T. Rettner, M. E. Best, E. E. Fullerton, D. Weller, M. Parker, and M. F. Doerner, IEEE Trans. Magnetics, 36, 2137–9 (2000).

    Article  Google Scholar 

  22. D. M. Longo, W. E. Benson, T. Chraska, and R. Hull, Appl. Phys. Lett. 78, 981–3 (2001).

    Article  CAS  Google Scholar 

  23. Y. Liu, D. M. Longo, and R. Hull, Appl. Phys. Lett. 82, 346–8 (2003).

    CAS  Google Scholar 

  24. J. Melngailis, Nuc. Inst. Meth. B80/81, 1271–80 (1993).

    Google Scholar 

  25. Ch. Wilbertz, Th. Maisch, D. Huttner, K. Bohringer, K. Jousten, and S. Kalbitzer, Nuc. Inst. Meth. B63, 120–4 (1992).

    CAS  Google Scholar 

  26. L. Scipioni, D. Stewart, D. Ferranti, and A. Saxonis, J. Vac. Sci. Technol. B18, 3194–7 (2000).

    Google Scholar 

  27. J. Melngailis, A. A. Mondeli, I. L. Berry, and R. Mohondro, J. Vac. Sci. Technol. B16, 927–57 (1998).

    Google Scholar 

  28. W. H. Bruenger, R. Kaesmaier, H. Loeschner, and R. Springer, Mat. Res. Soc. Symp. Proc. 636, D5.5.1–12 (2001).

    Google Scholar 

  29. G. M. Whitesides and Y. Xia, Ann. Rev. Mater. Sci. 28, 153–84 (1998).

    Google Scholar 

  30. R. Hull, T. Chraska, Y. Liu, and D. Longo, Mat. Sci. Eng. C19, 383–92 (2002).

    CAS  Google Scholar 

  31. H. Schmid and B. Michel, Macromolecules, 33, 3042–9 (2000).

    Article  CAS  Google Scholar 

  32. T. W. Odom, V. R. Thalladi, J. C. Love, and G. M. Whitesides, J. Amer. Chem. Soc. 124 12112–3 (2002).

    Article  CAS  Google Scholar 

  33. See, for example, J. C. Love, J. R. Anderson, and G. M. Whitesides, Mat. Res. Soc. Bull. 26, 523–29, and references therein.

    Google Scholar 

  34. See, for example, S. Y. Chou, Mat. Res. Soc. Bull. 26, 512 (2001), and references therein.

    CAS  Google Scholar 

  35. M. Colburn, T. Bailey, B. J. Choi, J. G. Ekerdt, S. V. Sreenivasan, and C. G. Willson, Solid State Technology, 44, 67–78 (2001).

    Google Scholar 

  36. S. Y. Chou, P. R. Krauss, W. Zhang, L. Guo, and L. Zhuang, J. Vac. Sci. Technol. B15, 2897–904 (1997).

    Google Scholar 

  37. W. Zhang, S. Y. Chou, Appl. Phys. Lett. 79, 845–7 (2001).

    CAS  Google Scholar 

  38. Molecular Imprints, Inc. 1807-C West Braker Lane, Suite 100 Austin, TX 78758; Nanonex Corp., P.O. Box 334, Princeton, NJ, 08543.

    Google Scholar 

  39. See, for example, H. Schulz, H.-C. Scheer, T. Hoffman, C. M. Sotomayor Torres, K. Pfeiffer, G. Bleidiessel, G. Grutzner, Ch. Cardinaud, F. Gaboriau, M.-C. Peognon, J. Ahopelto, and B. Hediari, J. Vac. Sci. Technol. B18, 1861 (2000).

    Google Scholar 

  40. M. F. Crommie, C. P. Lutz, and D. M. Eigler, Science, 262, 218–20 (1993).

    CAS  Google Scholar 

  41. S. W. Park, H. T. Soh, C. F. Quate, and S.-I. Park, Appl. Phys. Lett. 67, 2415–7 (1995).

    CAS  Google Scholar 

  42. E. S. Snow and P. M. Campbell, Science, 270, 1639 (1995).

    CAS  Google Scholar 

  43. S. C. Minne, J. D. Adams, G. Yaralioglu, S. R. Manalis, A. Atalar, and C. F. Quate, Appl. Phys. Lett. 73, 1742–4 (1998).

    Article  CAS  Google Scholar 

  44. R. D. Piner, J. Zhu, F. Xu, S. Hong, and C. A. Mirkin, Science 283, 661–3 (1999).

    Article  CAS  Google Scholar 

  45. C. A. Mirkin, Mat. Res. Soc. Bull. 26, 535–8 (2001).

    CAS  Google Scholar 

  46. L. M. Demers, D. S. Ginger, S.-J. Park, Z. Li, S.-W. Chung, and C. A. Mirkin, Science 296, 1836–8 (2002).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2004 Springer Science + Business Media, Inc.

About this chapter

Cite this chapter

Harriott, L.R., Hull, R. (2004). Nanolithography. In: Di Ventra, M., Evoy, S., Heflin, J.R. (eds) Introduction to Nanoscale Science and Technology. Nanostructure Science and Technology. Springer, Boston, MA. https://doi.org/10.1007/1-4020-7757-2_2

Download citation

  • DOI: https://doi.org/10.1007/1-4020-7757-2_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4020-7720-3

  • Online ISBN: 978-1-4020-7757-9

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics