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Electrical and Polarization Properties of Nano-Sized ZrO2 on Polycrystalline Silicon

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Functional Properties of Nanostructured Materials

Part of the book series: Nato Science Series ((NAII,volume 223))

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Abstract

The transient conductivity and polarization of nano-sized ZrO2 thin films were investigated. RF magnetron sputtering was used for the deposition of the films with different thicknesses on poly-Si. The layers were annealed at 600 and 850°C in oxygen ambient. Capacitors fabricated with top Al contacts were studied by current-voltage and hysteresis loop measurements. The dependence of the polarization on thickness and annealing temperature was evaluated.

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Author information

Authors and Affiliations

  1. Institute of Solid State Physics, BAS, Tzarigradsko chaussee 72, Sofia, 1784, Bulgaria

    P. V. Aleksandrova, V. K. Gueorguiev, TZ. E. Ivanov & J. B. Koprinarova

Authors
  1. P. V. Aleksandrova
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  2. V. K. Gueorguiev
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  3. TZ. E. Ivanov
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  4. J. B. Koprinarova
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Editor information

Editors and Affiliations

  1. Department of Natural Sciences, University of Kassel, Germany

    Rainer Kassing

  2. Department of Physics, University of Chemical Technology and Metallurgy, Sofia, Bulgaria

    Plamen Petkov

  3. Department of Natural Sciences, University of Kassel, Germany

    Wilhelm Kulisch

  4. Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Sofia, Bulgaria

    Cyril Popov

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© 2006 Springer

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Aleksandrova, P., Gueorguiev, V., Ivanov, T., Koprinarova, J. (2006). Electrical and Polarization Properties of Nano-Sized ZrO2 on Polycrystalline Silicon. In: Kassing, R., Petkov, P., Kulisch, W., Popov, C. (eds) Functional Properties of Nanostructured Materials. Nato Science Series, vol 223. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4594-8_28

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