Skip to main content
  • 2102 Accesses

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Vandamme, E. P.; Schreurs, D.; van Dinther, C.; Badenes, G.; Deferm, L. “Development of an RF large signal MOSFET model based on an equivalent circuit, and comparison with the BSIM3v3 model”, Solid-State Electron., 2002, 46(3), 353-360.

    Article  Google Scholar 

  2. Verspecht, J.; Debie, P.; Barel, A.; Martens, L. “Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device”, IEEE MTT-S Int. Microwave Sympos., 1995, 1029-1032.

    Google Scholar 

  3. Schreurs, D.; Verspecht, J. “Large-signal modelling and measuring go hand-in-hand: accurate alternatives to indirect S-parameter methods”, Int. J. RF Microwave Comput. -Aided Engrg., 2000, 10(1), 6-18.

    Article  Google Scholar 

  4. Schreurs, D.; Rutkowski, J.; Beyer, A.; Nauwelaers, B. “Development of a frequency-domain simulation tool and non-linear device model from vectorial large-signal mea-surements”, Int. J. RF Microwave Comput. -Aided Engrg., 2000, 10(1), 63-72.

    Article  Google Scholar 

  5. Schreurs, D.; Wood, J.; Tufillaro, N.; Barford, L.; Root, D. “Construction of behavioural models for microwave devices from time-domain large-signal measurements to speed-up high-level design simulations”, Int. J. RF Microwave Comput. -Aided Engrg., 2003, 13(1), 54-61.

    Article  Google Scholar 

  6. Jansen, P.; Schreurs, D.; De Raedt, W.; Nauwelaers, B.; Van Rossum, M. “Consistent small-signal and large-signal extraction techniques for heterojunction FETs”, IEEE Trans. Microwave Theory and Techniques, 1995, 43(1), 87-93.

    Article  Google Scholar 

  7. Schreurs, D.; van Meer, H.; van der Zanden, K.; De Raedt, W.; Nauwelaers, B.; Van de Capelle, A. “Improved HEMT model for low phase noise in InP based MMIC oscillators”, IEEE Trans. Microwave Theory and Techniques, 1998, 46(10), 1583-1585.

    Article  Google Scholar 

  8. Vandamme, E. P.; Schreurs, D.; van Dinther, C. “Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures”, IEEE Trans. Electron Dev., 2001, 48(4), 737-742.

    Article  Google Scholar 

  9. Dambrine, G.; Cappy, A.; Heliodore, F.; Playez, E. “A new method for determining the FET small-signal equivalent circuit”, IEEE Trans. Microwave Theory and Techniques, 1998, 36(7), 1151-1159.

    Article  Google Scholar 

  10. Schreurs, D.; Baeyens, Y.; Nauwelaers, B.; De Raedt, W.; Van Hove, M.; Van Rossum, M. “S-parameter measurement based quasi-static large-signal cold HEMT model for resistive mixer design”, Int. J. Microwave and Millimeter-Wave Comput. -Aided Engrg., 1996, 6(4), 250-258.

    Article  Google Scholar 

  11. Tsividis, Y. Operation and modelling of the MOS transistor, McGraw-Hill; 1999.

    Google Scholar 

  12. Root, D. E.; Fan, S. “Experimental evaluation of large-signal modeling assumptions based on vector analysis of bias-dependent S-parameter data from MESFETs and HEMTs”, IEEE MTT-S Int. Microwave Sympos., 1992, 255-258.

    Google Scholar 

  13. Augendre, E.; Rooyackers, R.; Caymax, M.; Vandamme, E. P.; De Keersgieter, A.; Perello, C.; Van Dievel, M.; Pochet, S.; Badenes, G. “Elevated source/drain by sacri-ficial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity”, IEEE Trans. Electron Dev., 2000, 47(7), 1484-1491.

    Article  Google Scholar 

  14. Schreurs, D.; Vandamme, E.; Vandenberghe, S.; Carchon, G.; Nauwelaers, B. “Verifica-tion of non-linear MOSFET models by intermodulation measurements under loadpull conditions”, Automatic RF Techniques Group Conf. (ARFTG), June 2000, 58-62.

    Google Scholar 

  15. Schreurs, D.; Vandamme, E.; Vandenberghe, S.; Carchon, G.; Nauwelaers, B. “Applica-bility of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs”, IEEE MTT-S Int. Microwave Sympos., 2000, 457-460.

    Google Scholar 

  16. Schreurs, D.; Verspecht, J.; Vandenberghe, S.; Vandamme, E. “Straightforward and accu-rate nonlinear device model parameter estimation method based on vectorial largesignal measurements”, IEEE Trans. Microwave Theory and Techniques, 2002, 50(10), 2315-2319.

    Article  Google Scholar 

  17. Angelov, I.; Zirath, H.; Rorsman, N. “Validation of a nonlinear transistor model by power spectrum characteristics of HEMT’s and MESFET’s”, IEEE Trans. Microwave Theory and Techniques, 1995, 43(5), 1046-1052.

    Article  Google Scholar 

  18. Zhang, Q. J.; Gupta, K. C. Neural networks for RF and microwave design, Artech House, 2000.

    Google Scholar 

  19. Schreurs, D.; Jargon, J.; Remley, K.; DeGroot, D.; Gupta, K. C. “ANN model for HEMTs constructed from large-signal time-domain measurements”, Automatic RF Techniques Group Conf. (ARFTG), June 2002, 6.

    Google Scholar 

  20. Schreurs, D.; Verspecht, J.; Nauwelaers, B.; Van de Capelle, A.; Van Rossum, M. “Direct extraction of the non-linear model for two-port devices from vectorial non-linear network analyzer measurements”, Eur. Microwave Conf., 1997, 921-926.

    Google Scholar 

  21. Schreurs, D.; Vandenberghe, S.; Wood, J.; Tufillaro, N.; Barford, L.; Root, D. E. “Auto-matically controlled coverage of the voltage plane of quasi-unilateral devices”, Automatic RF Techniques Group Conf. (ARFTG), May 2001, 86-90.

    Google Scholar 

  22. Schreurs, D.; Remley, K. A.; Williams, D. F. “A metric for assessing the degree of device nonlinearity and improving experimental design”, IEEE Int. Microwave Sympos., 2004, 795-798.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2006 Springer

About this chapter

Cite this chapter

SCHREURS, D. (2006). Modelling using high-frequency measurements. In: GRABINSKI, W., NAUWELAERS, B., SCHREURS, D. (eds) TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4556-5_4

Download citation

  • DOI: https://doi.org/10.1007/1-4020-4556-5_4

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-4555-4

  • Online ISBN: 978-1-4020-4556-1

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics