Abstract
We present calculations of the electrical energy levels of the oxygen vacancy and the oxygen interstitial in HfO2, ZrO2, ZrSiO4 and La2O3. The levels are aligned to those of the Si channel using the known band offsets. In HfO2, the oxygen vacancy gives an energy level in the Si gap or just above the gap, depending on its charge state. This is the main electrically active defect and trap. The oxygen interstitial gives levels just above the oxide valence band, and the neutral interstitial also gives a level near the Si conduction band.
Keywords
- Electron Spin Resonance
- Generalise Gradient Approximation
- Local Density Approximation
- Gate Oxide
- Local Density Approximation Calculation
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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ROBERTSON, J., XIONG, K., CLARK, S., CLARK, S. (2006). DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES. In: Gusev, E. (eds) Defects in High-k Gate Dielectric Stacks. NATO Science Series II: Mathematics, Physics and Chemistry, vol 220. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4367-8_14
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DOI: https://doi.org/10.1007/1-4020-4367-8_14
Publisher Name: Springer, Dordrecht
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