This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Zhou, Ch., Kong, J. and Dai, H., 2000, Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters, Appl. Phys. Lett., 76, 1597-1599.
Tans, S. J. and Dekker, C., 2000, Potential modulations along carbon nano-tubes, Nature, 404, 834-835.
Appenzeller, J., Knoch, J., Martel, R., Derycke, V., Wind, S. and Avouris, Ph., 2002, Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors, Internat. Electron Dev. Meeting 2002, Technical Digest, 285-288.
Appenzeller, J., Knoch, J., Derycke, V., Wind, S. and Avouris, Ph., 2002, Field-modulated carrier transport in carbon nanotube transistors, Phys. Rev. Lett., 89, 126801.
Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J. and Avouris, Ph., 2002, Carbon nanotubes as Schottky barrier transistors, Phys. Rev. Lett., 89,106801.
Knoch, J., Mantl, S., Lin, Y. -M., Chen, Z., Avouris, Ph. and Appenzeller, J., 2004, An extended model for carbon nanotube field-effect transistors, Device Research Conf. 2004, Conference Digest, pp. 135-136.
Auth, Ch. and Plummer, J. D., Scaling theory for cylindrical, fully depleted, surrounding gate MOSFET's, IEEE Electron Dev. Lett., 18, 74-76.
Pikus, F. G. and Likharev, K. K., 1997, Nanoscale field-effect transistors: an ultimative size analysis, Appl. Phys. Lett., 71, 3661-3663.
Yan, R. -H., Ourmazd, A. and Lee, K. F., 1992, Scaling the Si MOSFET: From bulk to SOI to bulk, IEEE Trans. Electron Dev., 39, 1704-1710.
Young, K. K., 1989, Short-channel effect in fully-depleted SOI MOSFET's, IEEE Trans. Electron Dev., 36, 399-402.
Datta, S., 1995, Electronic Transport in Mesoscopic Systems, Cambridge University Press.
Datta, S., 2000, Nanoscale device modeling: The Green's function method, Superlatt. Microstructures, 28, 253-278.
Flietner, H., 1972, E(k) relation for 2-band scheme of semiconductors and application to metal-semiconductor contact, Phys. Stat. Solidi, 54, 201-208.
Hatta, E., Nagao, J. and Mukasa, K., 1996, Tunneling through a narrow-gap semiconductor with different conduction and valence band effective masses, J. Appl. Phys., 79, 1511-1514.
Knoch, J., Lengeler, B. and Appenzeller, J., 2002, Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI, IEEE Trans. Electron Dev., 49, 1212-1218.
Venugopal, R., Paulsson, M., Goasguen, S., Datta, S. and Lundstrom, M. S., 2003, A simple quantum mechanical treatment of scattering in nanoscale transistors, J. Appl. Phys., 93, 5613-5625.
Lake, R., Klimeck, G., Bowen, R. Ch. and Jovanovic, D., 1997, Single and multiband modeling of quantum electron transport through layered semiconductor devices, J. Appl. Phys., 81, 7845-7869.
Fisher, D. S. and Lee, P. A., 1981, Relation between conductivity and transmission matrix, Phys. Rev. B, 23, 6851-6854.
Sze, S. M., 1981, Physics of Semiconductor Device, John Wiley & Sons, Inc.
Landau, L. D. and Lifshitz, E. M., 1977, Quantum Mechanics, Pergamon Press, Oxford.
Heinze, S., Radosavljevic, M., Tersoff, J. and Avouris, Ph., 2003, Unexpected scaling of performance of carbon nanotube Schottky-barrier transistors, Phys. Rev. B, 68, 235418.
Knoch, J. and Appenzeller, J., 2002, Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett., 81, 3082-3084.
Lundstrom, M., 2000, Fundamentals of Carrier Transport, Cambridge University Press.
Lin, Y. -M., Appenzeller, J. and Avouris, Ph., 2004, Novel structures enabling bulk switching in carbon nanotube FETs, Device Research Conf., Conference Digest, 133-134.
Appenzeller, J., Radosavljevic, M., Knoch, J. and Avouris, Ph., 2004, Tunneling versus thermionic emission in one-dimensional semiconductors, Phys. Rev. Lett., 92, 048301.
Luryi, S., 1988, Quantum capacitance devices, Appl. Phys. Lett., 52, 501-503.
John, D. L., Castro, L. C. and Pulfrey, D. L., 2004, Quantum capacitance in nanoscale device modeling, J. Appl. Phys., 96, 5180-5184.
Rahman, A., Guo, J., Datta, S. and Lundstrom, M. S., 2003, Theory of ballistic nanotransistors, IEEE Trans. Electron Dev., 50, 1853-1864.
Taur, Y. and Ning, T. H., 1998, Fundamentals of Modern VLSI Devices, Cambridge University Press.
Guo, J., Datta, S. and Lundstrom, M. S., 2002, Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors, Internat. Electron Dev. Meeting 2002, Technical Digest, 711-714.
Appenzeller, J., Knoch, J., Radosavljevic, M. and Avouris, Ph., 2004, Multimode transport in Schottky barrier carbon nanotube field-effect transistors, Phys. Rev. Lett., 92, 226802.
Radosavljevic, M., Appenzeller, J., Avouris, Ph. and Knoch, J., 2004, High performance of potassium n-doped carbon nanotube field-effect transistors, Appl. Phys. Lett., 84, 3693-3695.
van Wees, B. J., Kouvenhoven, L. P., Willems, E. M. M., Harmans, C. J. P. M., Mooji, J. E., van Houten, H., Beenakker, C. W. J., Williamson, J. G. and Foxon, C. T., 1991, Quantum ballistic and adiabatic electron transport studied with quantum point contacts, Phys. Rev. B, 43, 12431-12453.
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer
About this chapter
Cite this chapter
Knoch, J., Appenzeller, J. (2006). Carbon Nanotube Field-effect Transistors-The Importance of Being Small. In: Mukherjee, S., Aarts, R.M., Roovers, R., Widdershoven, F., Ouwerkerk, M. (eds) AmIware Hardware Technology Drivers of Ambient Intelligence. Philips Research, vol 5. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4198-5_18
Download citation
DOI: https://doi.org/10.1007/1-4020-4198-5_18
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-4197-6
Online ISBN: 978-1-4020-4198-3
eBook Packages: Computer ScienceComputer Science (R0)