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Characterization of the Metal-Semiconductor Interface for Silicon Carbide Based Sensors

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Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 204))

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6. References

  1. Neudeck, P.G., Okojie, R.S., and Chen, L-Y. (2002) High-temperature electronics—A role for wide bandgap semiconductors, Proc. IEEE 90, 1065–1076.

    Article  Google Scholar 

  2. Unéus, L., Ljung, P., Mattsson, M., Mårtenssson, P., Wigren, R., Tobias, P., Lundström, I., Ekedahl, L-G., and Lloyd Spetz, A. (1999) Measurements with MISiC and MOS sensors in flue gases, Proc. Eurosensors XIII, The Hague, September 12–15, 521–524

    Google Scholar 

  3. Chen, L-Y., Hunter, G.W., Neudeck, P.G., Bansal, G., Petit, J.B., and Knight, D. (1997) Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC schottky diode sensors, J. Vacuum Science and Technology A15, 1228–1234.

    Article  ADS  Google Scholar 

  4. Ramachandran, V., Brady, M.F., Smith, A.R., Feenstra, R.M. and Greve, D.W. (1998) Preparation of atomically flat surfaces on silicon carbide using hydrogen etching, J. Electronic Materials, 27 308–312.

    Article  CAS  Google Scholar 

  5. Woodworth, A.A., Peng, C.Y., Stinespring, C.D., and Meehan, K. (2004) (to be published).

    Google Scholar 

  6. Davis, L.E., MacDonald, N.C., Palmberg, P.W., Riach, G.E. and Weber, R.E. (1978) Handbook of Auger Electron Spectroscopy 2nd Ed., Physical Electronics, Eden Prairie Minnesota.

    Google Scholar 

  7. Bermudez V.M. (1983) Auger and electron energy-loss study of the Pd/SiC interface and its dependence on oxidation, Applications of Surface Science, 17, 12–22.

    Article  CAS  MathSciNet  Google Scholar 

  8. Lannon, J.M., Gold, J.S., and Stinespring, C.D. (1998) Evidence for surfactant mediated epitaxy of diamond, Applied. Physics Letters 73, 226–229.

    Article  ADS  CAS  Google Scholar 

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Woodworth, A.A., Peng, C.Y., Stinespring, C.D., Meehan, K. (2005). Characterization of the Metal-Semiconductor Interface for Silicon Carbide Based Sensors. In: Vaseashta, A., Dimova-Malinovska, D., Marshall, J.M. (eds) Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology. NATO Science Series II: Mathematics, Physics and Chemistry, vol 204. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3562-4_41

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