Abstract
We investigate strained heteroepitaxial crystal growth in the framework of a simplifying (1+1)-dimensional model by use of off-lattice kinetic Monte Carlo simulations. Our modified Lennard—Jones system displays the so-called Stranski—Krastanov growth mode: initial pseudomorphic growth ends by the sudden appearance of strain induced multilayer islands upon a persisting wetting layer.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
A. Pimpinelli and J. Villain, Physics of Crystal Growth, Cambridge University Press (1998).
P. Politi, G. Grenet, A. Marty, A. Ponchet, and J. Villain. Instabilities in crystal growth by atomic or molecular beams. Phys. Rep. 324: 271–404, 2000.
W. K. Liu and M. B. Santos (eds.), Thin Films: Heteroepitaxial systems, World Scientific (1999).
C. Heyn. Critical coverage for strain-induced formation of InAs quantum dots, Phys. Rev. B 64: art. no. 165306, 2001.
A. G. Cullis, D. J. Norris, T. Walther, M. A. Migliorato, and M. Hopkinson. Stranski—Krastanov transition and epitaxial island growth. Phys. Rev. B 66: art. no. 081305(R), 2002.
L. Chkoda, M. Schneider, V. Shklover, L. Kilian, M. Sokolowski, C. Heske, and E. Umbach. Temperature-dependent morphology and structure of ordered 3,4,9,10-perylene-tetracarboxylicacid-dianhydride (PCTDA) thin films on Ag(111). Chem. Phys. Lett. 371: 548–552, 2003.
A. C. Schindler, Theoretical aspects of growth in one and two dimensional strained crystal surfaces, dissertation, Duisburg (1999).
A. C. Schindler, D. D. Vvedensky, M. F. Gyure, G. D. Simms, R. E. Caflisch and C. Connell. Atomistic and continuum elastic effects in heteroepitaxial systems, in: Atomistic Aspects of Epitaxial Growth, M. Kotrla, N. I. Papanicolaou, D. D. Vvedensky, L. T. Wille (eds.), Kluwer (2002), pp. 337–353.
H. Spjut and D. A. Faux. Computer simulation of strain-induced diffusion enhancement of Si adatoms on the Si(001) surface. Surf. Sci. 306: 233–239, 1994.
J. Kew, M. R. Wilby, and D. D. Vvedensky. Continuous-space Monte Carlo simulations of epitaxial growth. J. Crystal Growth 127: 508–512, 1993.
F. Much, M. Ahr, M. Biehl, and W. Kinzel. Kinetic Monte Carlo simulations of dislocations in heteroepitaxial growth. Europhys. Lett. 56: 791–796, 2001.
M. Biehl and F. Much. Simulation of wetting-layer and island formation in heteroepitaxial growth. Europhys. Lett. 63: 14–20, 2003.
M. E. J. Newman and G. T. Barkema, Monte Carlo Methods in Statistical Physics, Oxford University Press (1999).
A. Madhukar. Far from equilibrium vapor phase growth of lattice matched III–V compound semiconductor interfaces: some basic concepts and Monte-Carlo computer simulations. Surf. Sci. 132: 344–374, 1983.
S. V. Ghaisas and A. Madhukar, Role of surface molecular reactions in influencing the growth mechanism and the nature of nonequilibrium surfaces: a Monte Carlo study of molecular-beam epitaxy, Phys. Rev. Lett. 56 (1986) 1066.
K. E. Khor and S. Das Sarma. Quantum dot self-assembly in growth of strained-layer thin films: a kinetic Monte Carlo study. Phys. Rev. B 62: 16657–16664, 2000.
M. Meixner, E. Schöll, V. A. Shchukin, and D. Bimberg. Self-assembled quantum dots: crossover from kinetically controlled to thermodynamically limited growth Phys. Rev. Lett. 87: art. no. 236101, 2001.
F. Jensen, Introduction to Computational Chemistry, Wiley (1999).
L. Dong, J. Schnitker, R. W. Smith, D. J. Sroloviy. Stress relaxation and misfit dislocation nucleation in the growth of misfitting films: A molecular dynamics simulation. J. Appl. Phys. 83: 217–227, 1997.
A. F. Voter, F. Montalenti, and T. C. Germann. Extending the time scale in atomistic simulations of materials. Ann. Rev. Mater. Res. 32: 321–346, 2002.
M. Schroeder and D. E. Wolf. Diffusion on strained surfaces. Surf. Sci. 375: 129–140, 1997.
V. Cherepanov and B. Voigtländer. Influence of strain on diffusion at Ge(111) surfaces. Appl. Phys. Lett. 81: 4745–4747, 2002.
V. Cherepanov and B. Voigtländer. Influence of material, surface reconstruction, and strain on diffusion at the Ge(111) surface. Phys. Rev. B 69: art. no. 125331, 2004
D. Leonard, K. Pond, and P. M. Petroff. Critical layer thickness for self-assembled InAs islands on GaAs. Phys. Rev. B 50: 11687–11692, 1994.
J. Johansson and W. Seifert. Kinetics of self-assembled island formation: Part I: Island density. J. Crystal Growth 234: 132–138, 2002; Part II: Island size, 234: 139–144, 2002.
mpeg movies and other illustrations are available from the web pages http://www.physik.uni-wuerzburg.de/~biehl {∼much}.
J. Tersoff. New empirical approach for the structure and energy of covalent systems. Phys. Rev. B 37: 6991–7000, 1988.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2005 Springer
About this paper
Cite this paper
Biehl, M., Much, F. (2005). Off-Lattice KMC Simulations of Stranski-Krastanov-Like Growth. In: Joyce, B.A., Kelires, P.C., Naumovets, A.G., Vvedensky, D.D. (eds) Quantum Dots: Fundamentals, Applications, and Frontiers. NATO Science Series, vol 190. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3315-X_6
Download citation
DOI: https://doi.org/10.1007/1-4020-3315-X_6
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-3313-1
Online ISBN: 978-1-4020-3315-5
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)