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Interfacial Properties of Epitaxial Oxide/Semiconductor Systems

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Materials Fundamentals of Gate Dielectrics

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Authors and Affiliations

  1. Freescale Semiconductor, Inc., 6501 William Cannon Dr. West, Austin, TX, 78735, USA

    Y. Liang

  2. Department of Physics, The University of Texas at Austin, Austin, TX, USA

    A.A. Demkov

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  1. Y. Liang
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  2. A.A. Demkov
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Editors and Affiliations

  1. Freescale Semiconductor. Inc., Austin, USA

    Alexander A. Demkov

  2. University of California, Davis, CA, USA

    Alexandra Navrotsky

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Liang, Y., Demkov, A. (2005). Interfacial Properties of Epitaxial Oxide/Semiconductor Systems. In: Demkov, A.A., Navrotsky, A. (eds) Materials Fundamentals of Gate Dielectrics. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3078-9_9

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