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Spectroscopy of Emerging Materials pp 97–114Cite as

Progress in Light Emission from Silicon Nanostructures

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Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 165))

Abstract

The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects for application in silicon-based optoelectronics are assessed.

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Authors and Affiliations

  1. Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada

    David J. Lockwood

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  1. David J. Lockwood
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Editors and Affiliations

  1. Institut des Matériaux Jean Rouxel, Nantes, France

    Eric C. Faulques

  2. Lawrence Berkeley National Laboratory, University of California, Berkeley, CA, USA

    Dale L. Perry

  3. Verkin Institute for Low Temperature Physics & Engineering, Kharkov, Ukraine

    Andrei V. Yeremenko

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© 2004 Kluwer Academic Publishers

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Lockwood, D.J. (2004). Progress in Light Emission from Silicon Nanostructures. In: Faulques, E.C., Perry, D.L., Yeremenko, A.V. (eds) Spectroscopy of Emerging Materials. NATO Science Series II: Mathematics, Physics and Chemistry, vol 165. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2396-0_8

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