Abstract
The peculiarities of formation of an intermediate nanolayer between metal and semiconductor in Al-(SiO2)-n-Si, Al-p+-n-Si, Al-silicide-Si structures and its influence on parameters and characteristics of Schottky diodes (SD) are analyzed. It is shown, that pulse laser irradiation of the SD transformed interface layer in the Al-nanostructured layer-Si structures and corrected the SD characteristics.
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Vorobets, G. (2004). Diode Shottky Systems on Al-Nanosilicon Interface Layer-Si. In: Buzaneva, E., Scharff, P. (eds) Frontiers of Multifunctional Integrated Nanosystems. NATO Science Series II: Mathematics, Physics and Chemistry, vol 152. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2173-9_21
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DOI: https://doi.org/10.1007/1-4020-2173-9_21
Publisher Name: Springer, Dordrecht
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