Abstract
We will examine possible sources of generation-recombination and 1/f noise in GaN/AlGaN 2D structures, quantum wells, and devices including contacts, bulk and quantum well itself and show that sources of g-r noise, and most probably of 1/f noise in HFETs are located in GaN or AlGaN layers within some distance from the 2D channel.
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Rumyantsev, S. (2004). Noise Sources in GaN/AlGaN Quantum Wells and Devices. In: Sikula, J., Levinshtein, M. (eds) Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices. NATO Science Series II: Mathematics, Physics and Chemistry, vol 151. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2170-4_2
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DOI: https://doi.org/10.1007/1-4020-2170-4_2
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-2169-5
Online ISBN: 978-1-4020-2170-1
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