Abstract
Attempts to explain the nature of the 1/f noise in AlGaN/GaN HFETs have involved three different mechanisms: occupancy fluctuations of the tail states near the band edges, fluctuations in the space charge regions surrounding dislocations, and electron tunneling from the 2D gas into adjacent GaN or AlGaN layers. Our experimental data favor the third mechanism. Three main arguments support this tunneling mechanism: (i) the observed temperature dependence of noise in the doped channel of AlGaN/GaN HFETs, which is explained by the tunneling model, (ii) a very weak temperature dependence of the 1/f noise in the temperature interval from 8 K to 300 K, (iii) the concentration dependence of the Hooge parameter typical for noise caused by the electron tunneling..
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Levinshtein, M., Rumyantsev, S., Shur, M.S. (2004). Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs. In: Sikula, J., Levinshtein, M. (eds) Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices. NATO Science Series II: Mathematics, Physics and Chemistry, vol 151. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2170-4_19
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DOI: https://doi.org/10.1007/1-4020-2170-4_19
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-2169-5
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