Abstract
It is shown that some peculiar features are typical for the drain current noise spectra of SOI MOSFETs with 2.5 nm gate oxide. In the frequency range 0.7 Hz≤f≤50 Hz a drain current spectral density is observed which follows a 1/f1.7 law for a broad range of operation conditions. It is demonstrated that this noise is only found in the front-channel current and is observed both in SOI and bulk MOSFETs. The model proposed considers this noise as being generated by carriers tunneling between the front channel and traps associated with the polysilicon gate/oxide interface and situated sufficiently close to the channel in the case of an ultra-thin gate oxide. When the absolute value of the gate voltage is equal or higher than 1 V, a Lorentzian component appears in the noise spectra measured in the linear regime. It is shown that the Lorentzian amplitude SI(0) can be described by the formula SI(0)=Bτ(VDS)2/L3 where B is a coefficient, τ is the Lorentzian time constant that decreases exponentially with increasing gate voltage, VDS is the drain voltage and L is the channel length. The mechanism proposed for this noise is based on the idea that it originates from the filtered shot noise induced by majority carriers which are injected in the floating body of the transistor by electron valence-band tunneling across the ultra-thin gate oxide. Therefore, the appearance of both noise components can be regarded as thinoxide noise effects.
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References
N. Lukyanchikova, M. Petrichuk, N. Garbar, E. Simoen, A. Mercha, H. van Meer, K. De Meyer and C. Claeys, On the origin of the 1/f1.7 noise in deep submicron partially depleted SOI transistors, Proc. ESSDERC 2002, eds. G. Baccarani, E. Gnani and M. Rudan, The University of Bologna (Italy) (2002) 75–78.
N. Lukyanchikova, M. Petrichuk, N. Garbar, E. Simoen, A. Mercha, C. Claeys, H. van Meer and K. De Meyer, The 1/f1.7 noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide, IEEE Trans. Electron Devices 49 (2002) 2367–2370.
A. Mercha, J. M. Rafi, E. Simoen, C. Claeys, N. Lukyanchikova, M. Petrichuk, N. Garbar, Evidence for a “linear kink effect” in ultra-thin gate oxide SOI n-MOSFETs, in Proc. of the Eleventh Int. Symposium on Silicon-on-Insulator Technology and Devices XI, Eds S. Cristoloveanu, G. K. Celler, J. G. Fossum, F. Gamiz, K. Izumi and Y.-W. Kim, The Electrochem. Soc. Ser. PV 2003-05 (2003) 319–324.
E. Simoen, M. Da Rold, C. Claeys, N. Lukyanchikova, M. Petrichuk and N. Garbar, Flicker noise in submicron MOSFETs with 3.5 nm nitrided gate oxide, in Proc. ICNF’ 2001, Ed. G. Bosman, World Scientific (Singapore) (2001) 177–180.
K. M. Chang, Y. H. Chung, T. C. Lee and Y. L. Sun, A method to characterize n+-polysilicon/oxide interface traps in ultrathin oxides, Electrochem. and Solid-State Letters 4 (2001) G47–G49.
R. Jayaraman and C. G. Sodini, A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon, IEEE Trans. Electron Devices 36 (1989) 1773–1782.
R. R. Siergiej, M. H. White, and N. S. Saks, Theory and measurement of quantization effects on Si-SiO2 interface trap modeling, Solid-St. Electron., 35 (1992) 843–854.
E. Simoen and C. Claeys, On the flicker noise in submicron silicon MOSFETs, Solid-St.Electron. 43 (1999) 865–882.
N. B. Lukyanchikova, M. V. Petrichuk, N. Garbar, A. Mercha, E. Simoen and C. Claeys, Electron Valence Band tunneling-induced Lorentzian noise in deep submicron Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, J. Appl. Phys., 94 (2003) 4461–4469.
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Lukyanchikova, N., Simoen, E., Mercha, A., Claeys, C. (2004). Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs. In: Sikula, J., Levinshtein, M. (eds) Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices. NATO Science Series II: Mathematics, Physics and Chemistry, vol 151. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2170-4_15
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DOI: https://doi.org/10.1007/1-4020-2170-4_15
Publisher Name: Springer, Dordrecht
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