7.10. Summary
In this Chapter, we have first described the equilibrium properties of charge carriers in a semiconductor. We introduced the concepts of effective density of states, mass action law, and intrinsic and extrinsic semiconductor. The n-type and p-type doping of semiconductors has been discussed, taking into account the charge neutrality of the solid. We also discussed the importance of the Fermi energy.
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References
Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
Wolfe, CM., Holonyak, Jr., N., and Stillman, G.E., Physical Properties of Semiconductors, Prentice-Hall, Englewood Cliffs, NJ, 1989.
Further reading
Anselm, A., Introduction to Semiconductor Theory, Prentice-Hall, Englewood Cliffs, NJ, 1981.
Ashcroft, N. W. and Mermin, N.D., Solid State Physics, Holt, Rinehart and Winston, New York, 1976.
Cohen, M.M., Introduction to the Quantum Theory of Semiconductors, Gordon and Breach, New York, 1972.
Ferry, D.K., Semiconductors, Macmillan, New York, 1991.
Hummel, R.E., Electronic Properties of Materials, Springer-Verlag, New York, 1986.
Pierret, R.F., Advanced Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.
Sapoval, B. and Hermann, C, Physics of Semiconductors, Springer-Verlag, New York, 1995.
Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, 1990.
Wang, S., Fundamentals of Semiconductor Theory and Device Physics, Prentice-Hall, Englewood Cliffs, NJ, 1989.
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(2006). Equilibrium Charge Carrier Statistics in Semiconductors. In: Fundamentals of Solid State Engineering. Springer, Boston, MA. https://doi.org/10.1007/0-387-28751-5_7
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DOI: https://doi.org/10.1007/0-387-28751-5_7
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