Semiconductor Device Technology

15.6. Summary

In this Chapter, we have reviewed a few of the steps involved in the fabrication of semiconductor devices, including oxidation, diffusion and ion implantation. Although the discussion was primarily based on silicon, the concepts introduced are applicable for the entire semiconductor industry.

We described the oxidation experimental process, mathematically modeled the formation of a silicon oxide film, discussed the factors influencing the oxidation and reviewed the methods used to characterize the oxide film. The diffusion and ion implantation of impurity dopants in silicon to achieve controlled doping in selected areas of a wafer was described, along with the resulting dopant concentration profiles inside the semiconductor. The predeposition and drive-in conditions of diffusion were discussed. Methods used to assess the electrical properties of the diffused or implanted layers were reviewed.