Abstract
The combination of field emission scanning electron microscopy (FESEM) and focused ion beam (FIB) is a future key technology for semiconductor and materials science related applications. Through the combination of the Gemini ultrahigh resolution field emission SEM column and the Canion31+ high performance FIB column a wide field of applications can be accessed. This includes structural cross-sections for SEM and transmission electron microscopy (TEM) applications, device modification, failure analysis, sublayer measurement and examination, as well as SEM and FIB related analytical techniques such as energy dispersive x-ray spectroscopy (EDS), wavelength dispersive x-ray spectroscopy (WDS), secondary ion mass spectrometry (SIMS) etc. Real time high resolution SEM imaging of the cutting and deposition process enables the researcher to perform very accurate three dimensional structural examinations and device modifications.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Gnauck P, Greiser J, “A new approach to materials characterization using low pressure and low voltage field emission scanning electron microscopy” DVM-Bericht 519, Mühlheim 2000, pp. 89–96 (2000).
Gnauck P, Drexel V, Greiser J, “A new high resolution field emission SEM with variable pressure capabilities” Microscopy and Microanalysis 2002, Long Beach, California, August 5–9 (2001).
Weimer E, Martin JP, “Development of a new ultra high performance scanning electron microscope”, 13th Int. Congr. on Electron Microscopy ICEM, Vol.1, pp. 67–68.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2005 Springer Science+Business Media, Inc.
About this chapter
Cite this chapter
Gnauck, P., Hoffrogge, P., Schumann, M. (2005). High Resolution Live Imaging of FIB Milling Processes for Optimum Accuracy. In: Giannuzzi, L.A., Stevie, F.A. (eds) Introduction to Focused Ion Beams. Springer, Boston, MA. https://doi.org/10.1007/0-387-23313-X_7
Download citation
DOI: https://doi.org/10.1007/0-387-23313-X_7
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-387-23116-7
Online ISBN: 978-0-387-23313-0
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)