Abstract
The last stage in a transmitter path is the power amplifier (PA). No more signal processing takes place after the PA, thus putting stringent demands on the PA. Furthermore, efficient RF PAs are highly desirable in battery-operated systems, since PAs typically dominate the power consumption of the system. This chapter focuses on the design of bipolar and MOS PAs and discusses principles to improve the linearity of a PA.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
J.B. Hagen, Radio-Frequency Electronics, Circuits and Applications, Cambridge University Press, New York, 1996.
H. Krauss et al., Solid State Radio Engineering, Wiley, New York, 1980.
F. Raab, “High Efficiency Amplification Techniques,” IEEE Circuit Syst. (Newsletter), no. 12, pp. 3–11, Dec. 1985.
F. Sechi, “Linearized Class-B Transistor Amplifier,” IEEE Journal of. Solid-State Circuits, vol. 11,no. 4, pp. 264–270, Apr. 1975.
S.L. Wong and S. Luo, “A 2.7–5.5V, 0.2–1 W BiCMOS RF Driver Amplifier IC with Closed Loop Power Control and Biasing Functions,” IEEE. Journal of Solid-State Circuits, vol. 33,no. 12, pp. 2259–2264, Dec. 1998.
N.O. Sokal and A.D. Sokal, “Class E — A New class of high Efficiency Tuned Single-ended Switching Power Amplifiers,” IEEE Journal of Solid-State Circuits, vol. 10,no. 6, pp. 168–176, June 1975.
M. Kazimierczuk, “Class E Tuned Power Amplifier with Shunt Inductor,” IEEE Journal of Solid-State Circuits, vol. 16,no. 2, pp. 2–7, Feb. 1981.
T. Sowlati et al., “Low Voltage High Efficiency GaAs Class E Power Amplifier for Wireless Trasnmitters,” IEEE Journal of Solid-State Circuits, vol. 30,no. 10, pp. 1074–1080, Oct. 1995.
W. Simburger et al., “A monolithic Transformer Coupled 5-W Silicon Power Amplifier with 59% at 0.9GHz,” IEEE Journal of Solid-State. Circuits, vol. 31,no. 12, pp. 1881–1892, Dec. 1999.
X. Zhang et al., “A SiGe HBT Power Amplifier with 40% PAE for PCS CDMA Applications,” in proc. of 2000 IEEE MTT-S Digest, 2000, pp. 857–860.
S. Luo and T. Sowlati, “A monolithic Si PCS-CDMA Power Amplifier with an Impedance-Controllable Biasing Scheme,” in proc. of 2000 IEEE. MTT-S Digest, 2001.
T. Sowlati and S. Luo, “Bias Boosting Technique for a 1.9GHz Class AB RF Amplifier,” Proc. Int. Symp. on Low Power Electronics and Design. (Italy), July 2000.
V. Vathulya et al., “Class 1 Bluetooth Power Amplifier with 24dBm Output Power and 48% PAE at 2.4 GHz in 0.25 um CMOS,” in European. Solid-State Circuits Conf. (ESSCIRC), 2001.
E. Takeda and N. Suzuki, “An Empirical Model for device Degradation due to Hot Carrier Injection,” IEEE Electron Device Letters, vol. 34,no. EDL-4, pp. 111–, June 1983.
J. Choi et al., “Hot Carrier-Induced MOSFET Degradation: AC versus DC Stressing,” in VLSI Technology Symposium Digest, 1987, pp. 45–47.
W. Weber et al., “Lifetimes and Substrate Currents in Static and Dynamic Hot-Carrier Degradation,” in IEDM Technical Digest, 1986, pp. 390.
S. Stapleton and F. Costescu, “An Adaptive Predistorter for a Power Amplifier based on Adjacent Channel Emissions,” IEEE Trans. on Vehicular. Technology, vol. 41,no. 2, pp. 49–57, Feb. 1992.
T. Sowlati et al., “Phase-Correcting Feedback System for Class E Power Amplifier,” IEEE Journal of Solid-State Circuits, vol. 32,no. 4, pp. 544–549, Apr. 1997.
L. Kahn, “Single-sideband transmission by envelope elimination and restoration,” proc. IRE, pp. 803–806, July 1952.
L. Kahn, “Comparison of linear single-sideband transmission with envelope elimination and restoration single-sideband transmitters,” proc. IRE, pp. 1706–1712, Dec. 1956.
D.K. Su and W.J. McFarland, “An IC for Linearizing RF Power Amplifiers using Envelope Elimination and Restoration,” IEEE Journal of Solid-State. Circuits, vol. 33,no. 12, pp. 2252–2258, Dec. 1998.
Rights and permissions
Copyright information
© 2003 Kluwer Academic Publishers
About this chapter
Cite this chapter
(2003). RF power amplifiers. In: Circuit Design For RF Transceivers. Springer, Boston, MA. https://doi.org/10.1007/0-306-47978-8_5
Download citation
DOI: https://doi.org/10.1007/0-306-47978-8_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7551-7
Online ISBN: 978-0-306-47978-6
eBook Packages: Springer Book Archive