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Unoccupied Band Structure of Layered Materials by Very-Low-Energy Electron Diffraction: Implications in Photoemission

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Part of the book series: Physics and Chemistry of Materials with Low-Dimensional Structures ((PCMALS,volume 24))

Abstract

The unoccupied bandstructure E(k) above the vacuum level describes the final state bands relevant for photoemission. For layered materials this E(k) includes significant non-free-electron effects due to strong modulation of the crystal potential perpendicular to the layers. The most direct experimental method to probe the unoccupied E(k) with k-resolution is Very-Low-Energy Electron Diffraction. The experimentally determined unoccupied bands, which incorporate the effects of the crystal potential and the excited-state self-energy, can then be used as the true final bands in photoemission spectroscopy to achieve absolute determination of the valence band electronic structure with the three-dimensional k fully resolved.

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Strocov, V.N. (2002). Unoccupied Band Structure of Layered Materials by Very-Low-Energy Electron Diffraction: Implications in Photoemission. In: Hughes, H.P., Starnberg, H.I. (eds) Electron Spectroscopies Applied to Low-Dimensional Materials. Physics and Chemistry of Materials with Low-Dimensional Structures, vol 24. Springer, Dordrecht. https://doi.org/10.1007/0-306-47126-4_4

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  • DOI: https://doi.org/10.1007/0-306-47126-4_4

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