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Metal-Insulator Transition in Homogeneously Doped Germanium

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Phase Transitions and Self-Organization in Electronic and Molecular Networks

Part of the book series: Fundamental Materials Research ((FMRE))

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Conclusion

We have measured the electrical conductivity of NTD 70Ge:Ga to study the metal-insulator transition, ruling out an ambiguity due to inhomogeneous distribution of impurities. The critical exponent μ≈0.5 in zero magnetic field for doped semiconductors without impurity compensation has been confirmed. On the insulating side of the MIT, while the relation 2V≈ζ predicted by scaling theories [15] holds for 0.9 <N/NC <1, the critical exponents for localization length and impurity dielectric susceptibility change at N/NC ≈0.99. The small amount of doping compensation that is unavoidably present in our samples may be responsible for such a change in the exponents. We have also measured the conductivity in magnetic fields up to B=8 T in order to study the doping-induced MIT (in magnetic fields) and the magnetic-field-induced MIT. For both of the MIT, the critical exponent of the conductivity is 1.1, which is different from the value 0.5 at B=0. The change of the critical exponent caused by the applied magnetic fields supports a picture in which μ varies depending on the universality class to which the system belongs. The phase diagram has been determined in magnetic fields for the 70Ge:Ga system.

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Authors and Affiliations

  1. Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan

    Michio Watanabe

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  1. Michio Watanabe
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Editors and Affiliations

  1. Michigan State University, East Lansing, Michigan

    M. F. Thorpe

  2. Lucent Technologies, Bell Labs Innovations, Murray Hill, New Jersey

    J. C. Phillips

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© 2002 Kluwer Academic Publishers

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Watanabe, M. (2002). Metal-Insulator Transition in Homogeneously Doped Germanium. In: Thorpe, M.F., Phillips, J.C. (eds) Phase Transitions and Self-Organization in Electronic and Molecular Networks. Fundamental Materials Research. Springer, Boston, MA. https://doi.org/10.1007/0-306-47113-2_18

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  • DOI: https://doi.org/10.1007/0-306-47113-2_18

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-306-46568-0

  • Online ISBN: 978-0-306-47113-1

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