Skip to main content
SpringerLink
Log in

Local Bonding, Phase Stability and Interface Properties of Replacement Gate Dielectrics, Including Silicon Oxynitride Alloys and Nitrides, and Film ‘Amphoteric’ Elemental Oxides and Silicates

  • Chapter
Phase Transitions and Self-Organization in Electronic and Molecular Networks

Part of the book series: Fundamental Materials Research ((FMRE))

  • 283 Accesses

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Lucovsky, G. (1999), IBM J. Res. and Develop. 43, 301.

    CAS  Google Scholar 

  2. R. Zallen, R. (1983) The Physics of Amorphous Solids, John Wiley and Sons, New York, pp. 49–72.

    Google Scholar 

  3. Pauling, L. (1948) The Nature of the Chemical Bond, Cornel University Press, Ithaca, pp. 58–73.

    Google Scholar 

  4. Phillips, J.C. (1979) J. Non-Cryst Solids 34, 153; (1981) J. Non-Cryst Solids 43, 37.

    Article  CAS  Google Scholar 

  5. Phillips, J.C. (2000) J. Vac. Sci. Technol. B 18, 1749.

    Google Scholar 

  6. Kerner, R., and Phillips, J.C., (unpublished).

    Google Scholar 

  7. Zallen, R. (1983) The Physics of Amorphous Solids, John Wiley and Sons, New York, pp. 100–101.

    Google Scholar 

  8. National Technology Roadmap for Semiconductors, (SIA, San Jose, 1999)

    Google Scholar 

  9. Lucovsky, G., Yang, H., Niimi, H., Keister, J.W., Rowe, J.E. Phillips, J.C., and Thorpe, M.F. (2000) J. Vac. Sci. Technol. B 18, 1742.

    Google Scholar 

  10. Keister, J.W., Rowe, J.E., Kolodzie, J.J., Niimi, H., Tao, N.-S., Madey, T.E., and G. Lucovsky G. (1999), J. Vac. Sci. Technol. A 17, 1340.

    Google Scholar 

  11. Weldon, M., Queeny, K.T., Chabal, Y.J., Stefanov, B.B., and K. Raghavachai, K.. (1999) J. Vac. Sci. Technol. B 17, 1795.

    Google Scholar 

  12. Lucovsky, G., A. Banerjee, A. Hinds, B., Claflin, B., Koh, K.., and H. Yang, H. (1997) J. Vac. Sci. Technol. B 15, 1074.

    Google Scholar 

  13. Thorpe, M.F., Jacobs, D.J. and Chubynsky, M.V. (2000) J. Non-Cryst Solids 266, 859.

    Article  Google Scholar 

  14. Lucovsky, G. and Phillips, J.C. (1998) J. Non-Cryst Solids 227, 1221.

    Google Scholar 

  15. Lucovsky, G., Wu, Y., Niimi, H., Misra, V., and Phillips, J.C. (1999) Appl. Phys. Lett. 74, 2005.

    Article  CAS  Google Scholar 

  16. Selvanathan, D., Bresser, W.J., Boolchand, P., Phys. Rev. B 61, 15061 (2000).

    Google Scholar 

  17. Tu, Y and Tersoff, J. (2000) Phys. Rev. Lett. 84, 4693.

    Article  Google Scholar 

  18. Yang, H., Niimi, H., Keister, J.W., Lucovsky, G., and Rowe, J.E. (2000) IEEE Electron Device Letters 21, 76.

    CAS  Google Scholar 

  19. Lucovsky, G., Niimi, H., Koh, K., Lee, D.R., and Jing, Z (1996) H.Z. Massoud, E.H. Poindexter and C.R. Helms (eds). The Physics of SiO2 and Si-SiO2 Interfaces-3, The Electrochemical Society, Pennington, N.J., p. 441.

    Google Scholar 

  20. Misra, V., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J.J., and Hauser, J.R. (1999) J. Vac. Sci. Technol. B 17, 1836.

    Google Scholar 

  21. Wolfe, D., Flock, K., Therrien, R., Rayner, L. Günther, L., Brown, N., Claflin, B., and Lucovsky, G. (1999) Mat. Res. Soc. Symp. Proc. 567, 343.

    CAS  Google Scholar 

  22. Rayner. B., Therrien, R., and Lucovsky, G. (2000) Mat. Res. Soc. Symp. Proc. in press.

    Google Scholar 

  23. Robertson, J. (2000) J. Vac. Sci. Technol. B 18, 1785.

    Google Scholar 

  24. Hirose, M. and S. Miyazaki, S. unpublished.

    Google Scholar 

  25. Lucovsky, G., Rozaj-Brvar, A., and R.F. Davis, R.F. (1983) P.H. Gaskell, J.M. Parker and E.A. Davis (eds) The Structure of Non-Crystalline Materials, Taylor and Francis, London, p. 193.

    Google Scholar 

  26. Wilk, G.D. and R.M. Wallace, R.M. (1999) Appl. Phys. Lett. 74, 2854.

    Article  CAS  Google Scholar 

  27. Wilk, G.D., Wallace, R.M., and Anthony, J.M. (2000) J. Appl. Phys. 87, 484.

    Article  CAS  Google Scholar 

  28. Wilk, G.D. and R.M. Wallace, R.M. (2000) Appl. Phys. Lett. 76, 112.

    Article  CAS  Google Scholar 

  29. Misra, V., unpublished.

    Google Scholar 

  30. Jayasundere, N and Smith, B.V. (1993) J. Appl. Phys. 73, 2462.

    Article  Google Scholar 

  31. W.A. Harrison, W.A. (1999) Elementary Electronic Structure, World Science, Signapore, Chap. 11.

    Google Scholar 

  32. Burstein, E., Brodsky, M.H., and Lucovsky, G. (1967) International J. Quantum Chem. 1S, 759.

    Google Scholar 

  33. Cotton, F.A. and G. Wilkenson, G. (1972) Advanced Inorganic Chemistry, 3rd Edition, John Wiley and Son, New York, pp. 122–124.

    Google Scholar 

  34. Torpov, N.A. and I.A. Bondar, I.A. (1961) Izv. Akad. Nauk. SSSR, Ofd. Khim. Nauk 4, 547.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Departments of Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-8202, USA

    G. Lucovsky

Authors
  1. G. Lucovsky
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Michigan State University, East Lansing, Michigan

    M. F. Thorpe

  2. Lucent Technologies, Bell Labs Innovations, Murray Hill, New Jersey

    J. C. Phillips

Rights and permissions

Reprints and permissions

Copyright information

© 2002 Kluwer Academic Publishers

About this chapter

Cite this chapter

Lucovsky, G. (2002). Local Bonding, Phase Stability and Interface Properties of Replacement Gate Dielectrics, Including Silicon Oxynitride Alloys and Nitrides, and Film ‘Amphoteric’ Elemental Oxides and Silicates. In: Thorpe, M.F., Phillips, J.C. (eds) Phase Transitions and Self-Organization in Electronic and Molecular Networks. Fundamental Materials Research. Springer, Boston, MA. https://doi.org/10.1007/0-306-47113-2_13

Download citation

  • DOI: https://doi.org/10.1007/0-306-47113-2_13

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-306-46568-0

  • Online ISBN: 978-0-306-47113-1

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation