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The microstructure of technologically important silicon surfaces

  • Martin Henzler
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 27)

Abstract

The increasing requirements of modern silicon technology ask for structural analysis of non-periodic features down to atomic resolution. New instrumental developments in surface physics provide such informations both with imaging (TEM) and differaction (LEED) techniques. The atomic steps at the Si/SiO2 interface, which are produced during oxidation, are studied with respect to vertical and lateral distribution and to correlation with device performance (like interface state density and mobility). Also for epitaxial growth atomically smooth interfaces are required for best electrical and optical performance. LEED results show the two-dimensional nucleation and the layer-by-layer growth in detail.

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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1987

Authors and Affiliations

  • Martin Henzler
    • 1
  1. 1.Institut für FestkörperphysikUniversität HannoverHannoverFederal Republic of Germany

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