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Spectroscopy of inversion electrons on III–V semiconductors

  • Ulrich Merkt
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 27)

Abstract

The quasi two-dimensional electron gases realized in inversion layers of selectively doped GaAs/Ga1−xAlxAs heterojunctions and of metal-oxide-semiconductor structures on InSb are studied by far-infrared spectroscopy. Specifically, effects arising from the nonparabolic band structure of these semiconductors in the presence of the surface electric field and external magnetic fields are discussed. Taking advantage of the distinct band parameters of the two compounds GaAs and InSb, a fairly comprehensive picture of the motion of electrons in quasi two-dimensional electron systems on III–V semiconductors is obtained.

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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1987

Authors and Affiliations

  • Ulrich Merkt
    • 1
  1. 1.Institut für Angewandte PhysikUniversität HamburgHamburg 36Federal Republic of Germany

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