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Short Channel Effects (SCEs) Based Comparative Study of Double-Gate (DG) and Gate-All-Around (GAA) FinFET Structures for Nanoscale Applications

  • Vadthiya NarendarEmail author
  • Richa Parihar
  • Ashutosh Kumar Pandey
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 587)

Abstract

The FinFET device architecture is a leading contender in the field of electronic integrated circuits (ICs). A comparative study of double-gate (DG) and gate-all-around (GAA) FinFET structures on the ground of performance parameters like on-state current (ION), off-current (IOFF), subthreshold swing (SS), drain induced barrier lowering (DIBL) and threshold voltage (Vt) have been done. It has been found that GAA FinFETs are able to control the short channel effects (SCEs) more accurately over DG FinFETs when fin width to gate length ratio is properly optimized. Further, the comparison between rectangular and cylindrical channel GAA FinFETs has also done and found that cylindrical GAA FinFETs gives a better performance with respect to aforementioned parameters. All the numerical simulated results were performed on TCAD supported the stated findings.

Keywords

Cylindrical gate-all-around (GAA) FinFETs Drain induced barrier lowering (DIBL) Double-gate (DG) FinFETs Off-current (IOFFOn-current (IONSubthreshold swing (SS) 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Vadthiya Narendar
    • 1
    Email author
  • Richa Parihar
    • 2
  • Ashutosh Kumar Pandey
    • 3
  1. 1.Electronics and Communication Engineering DepartmentNational Institute of Technology WarangalTelanganaIndia
  2. 2.Electronics and Communication Engineering DepartmentInstitute of Engineering and TechnologyLucknowIndia
  3. 3.Electronics and Communication Engineering DepartmentMotilal Nehru National Institute of TechnologyPrayagrajIndia

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