Short Channel Effects (SCEs) Based Comparative Study of Double-Gate (DG) and Gate-All-Around (GAA) FinFET Structures for Nanoscale Applications
The FinFET device architecture is a leading contender in the field of electronic integrated circuits (ICs). A comparative study of double-gate (DG) and gate-all-around (GAA) FinFET structures on the ground of performance parameters like on-state current (ION), off-current (IOFF), subthreshold swing (SS), drain induced barrier lowering (DIBL) and threshold voltage (Vt) have been done. It has been found that GAA FinFETs are able to control the short channel effects (SCEs) more accurately over DG FinFETs when fin width to gate length ratio is properly optimized. Further, the comparison between rectangular and cylindrical channel GAA FinFETs has also done and found that cylindrical GAA FinFETs gives a better performance with respect to aforementioned parameters. All the numerical simulated results were performed on TCAD supported the stated findings.
KeywordsCylindrical gate-all-around (GAA) FinFETs Drain induced barrier lowering (DIBL) Double-gate (DG) FinFETs Off-current (IOFF) On-current (ION) Subthreshold swing (SS)
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