Dielectric Pocket (DP) Based Channel Region of the Junction-Less Dual Material Double Gate (JLDMDG) MOSFET for Enhanced Analog/RF Performance

  • Amrish KumarEmail author
  • Abhinav Gupta
  • Sanjeev Rai
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 587)


In this paper, Dielectric pocket (DP) based channel region of the junction-less dual material double gate (JLDMDG) MOSFET is proposed. A comparative analysis of the JLDMDG and DPDMDG on the basis of analog/RF performance parameters has been done. Dielectric pockets are introduced in the channel region of JLDMDG. It can be observed that DPDMDG MOSFET has better functional density, higher early voltage and lower trans-conductance for high amplification. It can also be compared RF performance which shows that DPDMDG MOSFET has higher gain bandwidth product, lower values of capacitances for high-speed operation and lower power dissipation. Sensitivity parameters are estimated for DPDMDG and JLDMDG and it is observed that Ion and Ioff in DPDMDG is less sensitive to variation in tsi and tox in compare with JLDMDG. The analog/RF performance has shown that the DPDMDG MOSFET has better characteristics in low-power design and high-frequency applications.


SCEs Dielectric pocket (DP) DPDMDG JLDMDG 


  1. 1.
    Toyabe, T., Kadera, H., Kodera, H.: Generalized scaling theory and its application. 41(4), 1283–129 (1984)Google Scholar
  2. 2.
    Liang, X., Taur, Y.: A 2-D analytical solution for SCEs in DG MOSFETs. IEEE Trans. Electron Devices 51(9), 1385–1391 (2004)CrossRefGoogle Scholar
  3. 3.
    Li, Cong, et al. “Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensions.” Microelectronics Reliability 51.12 (2011): 2053–2058CrossRefGoogle Scholar
  4. 4.
    Colinge, J.P., et al.: Nanowire transistors without junctions. Nat. Nanotechnol. 5(3), 225–229 (2010)CrossRefGoogle Scholar
  5. 5.
    Kumari, V., et al.: Analytical modeling of dielectric pocket double-gate MOSFET incorporating hot-carrier-induced interface charges. IEEE Trans. Device Mater. Reliab. 14(1), 390–399 (2014)CrossRefGoogle Scholar
  6. 6.
    Gupta, A., Maurya, N., Rai, S.: Impact of dielectric pocket on analog/RF performance of short channel double gate MOSFET. In: 2017 4th International Conference on Power, Control & Embedded Systems (ICPCES). IEEE (2017)Google Scholar
  7. 7.
    Reddy, G.V., Jagadesh Kumar, M.: A new DMDG nanoscale SOI MOSFET-two dimensional analytical modeling and simulation. IEEE Trans. Nanotechnol. 4(2), 260–268 (2005)Google Scholar
  8. 8.
    International Technology Roadmap for Semiconductors.
  9. 9.
    ATLAS Device Simulator Software: Silvaco. Santa Clara, CA, USA (2015)Google Scholar
  10. 10.
    Kumar, A., Gupta, A., Rai, S.: Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor. AEU-Int. J. Electron. Commun. (2018)Google Scholar
  11. 11.
    Kumar, A., Gupta, A., Rai, S.: Charge plasma based graded channel with dual material double gate JLT for enhance analog/RF performance. In: 4th International Conference on Power, Control & Embedded Systems (ICPCES), pp. 1-6-2017/11. IEEEGoogle Scholar
  12. 12.
    Chauhan, R., Kumar, A., Rai, S.: A comparative study of junctionless dual material double gate silicon on insulator (SOI) and silicon on nothing (SON) MOSFET. In: 4th International Conference on Power, Control & Embedded Systems (ICPCES), pp. 1-7-2017/11 IEEEGoogle Scholar
  13. 13.
    Srivastava, M., Kumar, A., Rai, S.: Analytical model and performance investigation of electric potential for junctionless cylindrical surrounding gate (JLCSG) MOSFET. In: 2017 4th International Conference on Signal Processing and Integrated Networks (SPIN), pp. 256–261. IEEEGoogle Scholar
  14. 14.
    Malik, P., et al.: AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. Microelectron. Reliab. 52(1), 151–158 (2012)CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.Department of Electronics & Communication EngineeringMotilal Nehru National Institute of TechnologyAllahabadIndia
  2. 2.Electronics Engineering DepartmentRajkiya Engineering College SonbhadraSonbhadraIndia

Personalised recommendations