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Dielectric Pocket (DP) Based Channel Region of the Junction-Less Dual Material Double Gate (JLDMDG) MOSFET for Enhanced Analog/RF Performance

  • Amrish KumarEmail author
  • Abhinav Gupta
  • Sanjeev Rai
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 587)

Abstract

In this paper, Dielectric pocket (DP) based channel region of the junction-less dual material double gate (JLDMDG) MOSFET is proposed. A comparative analysis of the JLDMDG and DPDMDG on the basis of analog/RF performance parameters has been done. Dielectric pockets are introduced in the channel region of JLDMDG. It can be observed that DPDMDG MOSFET has better functional density, higher early voltage and lower trans-conductance for high amplification. It can also be compared RF performance which shows that DPDMDG MOSFET has higher gain bandwidth product, lower values of capacitances for high-speed operation and lower power dissipation. Sensitivity parameters are estimated for DPDMDG and JLDMDG and it is observed that Ion and Ioff in DPDMDG is less sensitive to variation in tsi and tox in compare with JLDMDG. The analog/RF performance has shown that the DPDMDG MOSFET has better characteristics in low-power design and high-frequency applications.

Keywords

SCEs Dielectric pocket (DP) DPDMDG JLDMDG 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.Department of Electronics & Communication EngineeringMotilal Nehru National Institute of TechnologyAllahabadIndia
  2. 2.Electronics Engineering DepartmentRajkiya Engineering College SonbhadraSonbhadraIndia

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