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Impact of HfO2 as Passivation Layer in the Simulation of PERC-Type Solar Cell

  • Rajesh Kumar JhaEmail author
  • Prashant Singh
  • Manish Goswami
  • B. R. Singh
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 587)

Abstract

We report the simulation of high-efficiency c-silicon Passivated Emitter Rear Contact (PERC) type solar cell structure with rear side passivated with HfO2 as a passivating material. Variation in the half-length of pyramid has been carried out to investigate its effect on the solar cell electrical characteristics such as Fill Factor (FF), Open-Circuit Voltage (Voc), and efficiency. Aluminum Back Surface Field (Al-BSF) and PERC-type solar cell with Al2O3 passivation layer structures were also modeled for comparison. Effect of variation in passivation layer (HfO2), thickness (10 and 15 nm), and permittivity (k = 14 and 25) on the solar cell electrical characteristics has been investigated. The result shows the efficiency improvement in the PERC solar cell with HfO2 passivation layer by 0.5941 and 0.983% as compared to the Al-BSF and PERC with Al2O3 passivation layer at 8 µm pyramid half-length. Increased series resistance and reduced FF has been observed with the incorporation of passivation layer at the solar cell structure. Negligible effect of passivation layer thickness has been observed on the solar cell electrical parameters whereas the permittivity value does have significant effect.

Notes

Acknowledgments

The authors would like to express there sincere thanks to Prof. P. Nagabhushan, Director, IIIT-A for his constant encouragement and support.

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© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringIndian Institute of Information Technology AllahabadAllahabadIndia

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