Transport Properties and Stability of Skyrmions in MnSi Thin Films
Thin films of skyrmionic materials offer the stage of stable skyrmions in a wide temperature range below the magnetic transition temperature, which is important for applications to non-volatile memory devices. In this section, we investigate the stability of skyrmions in thin films by means of transport measurements. With the use of planar Hall effect (PHE), we have revealed the formation of the in-plane skyrmions in the MnSi epitaxial thin films, which can hardly be detected by the conventional detection methods such as Lorentz TEM and topological Hall effect. We also investigate the stability of quasi-two-dimensional skyrmion by mapping the magnitude of topological Hall resistivity.
KeywordsStability of skyrmions Epitaxial thin films Topological Hall effect Planar Hall effect
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