Analysis of InN-Based Surrounded Gate Tunnel Field-Effect Transistor for Terahertz Applications
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The analysis of a proposed surrounded gate pocket intrinsic tunnel field-effect transistor (SG-PI-TFET) has been reported based on indium nitride (InN). The device structure has been simulated and analyzed using TCAD device simulator taking non-local band-to-band tunneling (BTBT) into consideration. We have accounted the fundamental limits of InN tunnel FET devices arising from the basic material properties by numerical simulation and analytical calculations. The tunneling current is evaluated and the effects are analyzed with a change in different device parameters to create the TFET design rule. The cut-off frequency (ft) of the device is found to be 0.45 THz which makes it appropriate for high-frequency applications.
KeywordsTunnel field-effect transistor (TFET) SG-PI-TFET Band-to-band tunneling (BTBT) InN TCAD device simulator
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