Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs

  • Yoshihisa FujisakiEmail author
Part of the Topics in Applied Physics book series (TAP, volume 131)


Ferroelectric field-effect transistors (FeFETs) composed of P(VDF-TrFE) (Poly(Vinylidenefluoride-Tirfluoroethylene)) thin films and semiconductor substrates show excellent ferroelectric transistor characteristics. Since P(VDF-TrFE) has the ferroelectricity as large as those of oxide ferroelectric materials with much lower dielectric constant, it is the ideal material to build FeFET with the combination to inorganic semiconductor material. In addition, the process condition to form P(VDF-TrFE) is much milder to underlying semiconducting material compared to oxide ferroelectrics. Therefore, the improvement on the retention characteristics is expected by employing P(VDF-TrFE) ferroelectrics in FeFET instead of oxide ferroelectrics. The potential of P(VDF-TrFE) FeFET is discussed in this chapter.


  1. 1.
    Y. Fujisaki, T. Kijima, H. Ishiwara, Appl. Phys. Lett. 78, 1285 (2001)Google Scholar
  2. 2.
    Y. Tabuchi, B. Park, K. Aizawa, Y. Kawashima, K. Takahashi, K. Kato, Y. Arimoto, H. Ishiwara, Integr. Ferroelectr. 65, 125 (2004)Google Scholar
  3. 3.
    S. Sakai, M. Takahashi, R. Ilangovan, Tech. Digest Int. Electron Dev. Meeting, 915 (2004)Google Scholar
  4. 4.
    E. Tokumitsu, G. Fujii,, H. Ishiwara, Appl. Phys. Lett. 75, 575 (1999)Google Scholar
  5. 5.
    H. Kawai, Jpn. J. Appl. Phys. 18, 976 (1969)Google Scholar
  6. 6.
    R. Hasegawa, Y. Takahashi, Y. Chatani, H. Tadokoro, Polymer J. 3, 600 (1972)Google Scholar
  7. 7.
    A.J. Lovinger, Development in Crystalline Polymers-1 (Applied Science Publishers, London and New Jersey, 1982), p. 195Google Scholar
  8. 8.
    P. DeSantis, E. Giglio, A.M. Liquori, A. Ripamonti, J. Polymer Sci. A, 1, 1383 (1963)Google Scholar
  9. 9.
    H. Horibe, M. Taniyama, J. Electrochem. Soc. 153, G119 (2006)Google Scholar
  10. 10.
    A.J. Bur, J.D. Barnes, K.J. Wahlstrand, J. Appl. Phys. 59, 2345 (1986)Google Scholar
  11. 11.
    H. Dvey-Aharon, T.J. Slucjin, P.L. Taylor, A.J. Hopfinger, Phys. Rev. B 21, 3700 (1980)Google Scholar
  12. 12.
    J.D. Clark, P.L. Taylor, Phys. Rev. Lett. 49, 1532 (1928)Google Scholar
  13. 13.
    F. Mospik, M.G. Broadhurst, J. Appl. Phys. 46, 4992 (1978)Google Scholar
  14. 14.
    H. Kakutani, J. Polymer Sic. 8, 1177 (1970)Google Scholar
  15. 15.
    M.G. Groadhurst, G.T. Davis, Topics in Modern Physics-Electronics, 2nd edn. (Springer, Berlin, 1987), p. 285Google Scholar
  16. 16.
    C.K. Purvis, P.L. Taylor, Phys. Rev. B 26, 4547 (1982)Google Scholar
  17. 17.
    C.K. Purvis, P.L. Taylor, J. Appl. Phys. 54, 1021 (1983)Google Scholar
  18. 18.
    R. Al-Jishi, P.L. Taylor, J. Appl. Phys. 57, 897 (1985)Google Scholar
  19. 19.
    R. Al-Jishi, P.L. Taylor, J. Appl. Phys. 57, 902 (1985)Google Scholar
  20. 20.
    H. Ogura, A. Chiba, Ferroelectrics 74, 247 (1987)Google Scholar
  21. 21.
    H. Tanaka, H. Yukawa, T. Nishi, Macromolecules 21, 2469 (1988)Google Scholar
  22. 22.
    T.R. Dargaville, J.M. Elliott, M. Celina, J. Polymer Sci. B 44, 3253 (2006)Google Scholar
  23. 23.
    T.R. Dargaville, M. Celina, P.M. Chaplya, J. Polymer Sci. B, 43, 1310 (2005)Google Scholar
  24. 24.
    H. Xu, J. Appl. Polymer Sci. 80, 2259 (2001)Google Scholar
  25. 25.
    M.P. Wenger, P.L. Almeida, P. Blanas, R.J. Shuford, D.K. Das-Gupta, Polym. Eng. Sci. 39, 483 (1999)Google Scholar
  26. 26.
    S. Fujisaki, H. Ishiwara, Y. Fujisaki, Appl. Phys. Lett. 90, 162902 (2007)Google Scholar
  27. 27.
    S. Fujisaki, Research on the application of organic ferroelectric P(VDF-TrFE) to non-volatile memories. Doctorial theses in Japanese, Japan (2008)Google Scholar
  28. 28.
    S. Fujisaki, Y. Fujisaki, H. Ishiwara, IEEE Trans. Ultrason. Ferroelectric. Freq. Control 54, 2592 (2007)Google Scholar
  29. 29.
    A. Gerber, H. Kohlstedt, M. Fitsilis, R. Waser, T.J. Reece, S. Ducharme, E. Rije, J. Appl. Phys. 100, 024110 (2006)Google Scholar
  30. 30.
    J.H. Kim, B.E. Park, H. Ishiwara, Jpn. J. Appl. Phys. 47, 8472 (2008)Google Scholar
  31. 31.
    G.A. Salvatore, D. Bouvet, A.M. Ionescu, Proc. IEEE Intern. Electron. Dev. Meeting 1 (2008)Google Scholar
  32. 32.
    T.J. Reece, S. Ducharme, A.V. Sorokin, M. Poulsen, App. Phys. Lett. 82, 142 (2003)Google Scholar
  33. 33.
    S.H. Lim, A.C. Rastogi, S.B. Desu, J. Appl. Phys. 96, 5673 (2004)Google Scholar
  34. 34.
    S. Fujisaki, Y. Fujiski, H. Ishiwara, Appl. Phys. Express, 1, 081801 (2008)Google Scholar
  35. 35.
    G.-G. Lee, E. Tokumitsu, S.-M. Yoon, Y. Fujisaki, J-W. Yoon, H. Ishiwara, Appl. Phys. Lett. 99, 012901 (2011)Google Scholar
  36. 36.
    C.H. Park, G. Lee, K.H. Lee, S. Im, B. H. Lee, M.M. Sung, Appl. Phys. Lett. 95, 153502 (2009)Google Scholar
  37. 37.
    S.-M. Yoon, S.-H. Yang, S.-H. Ko Park, S.-W. Jung, D.-H. Cho, C.-E. Byun, S.-Y. Kang, C.-S. Hwang, B.-G. Yu, J. Phys. D 42, 245101 (2009)Google Scholar
  38. 38.
    R.C.G. Naber, J. Massolt, M. Spijkman, K. Asadi, P.W.M. Blom, D.M. de Leeuw, Appl. Phys. Lett. 90, 113509 (2007)Google Scholar
  39. 39.
    R.C.G. Naber, C. Tanase, P.W.M. Blom, G.H. Gelinck, A.W. Marsman, F.J. Touwslager, S. Sepas, D.M. de Leeuw, Nat. Mater. 4, 243 (2005)Google Scholar
  40. 40.
    G.H. Gelinck, A.W. Marsman, F.J. Touwslager, S. Setaesh. D.M. de Leeuw, R.C.G. Naber, P. W. M. Blom, Appl. Phys. Lett. 87, 092903 (2005)Google Scholar
  41. 41.
    K. Müller, I. Paloumpa, K. Henkel, D. Schmeisser, J. Appl. Phys. 98, 056104 (2005)Google Scholar
  42. 42.
    K.N. Narayanan Unni, R. de Bettignies, S. Dabos-Seignon, J.-M. Nunzi, Appl. Phys. Lett. 85, 1823 (2004)Google Scholar
  43. 43.
    R. Schroeder, L.A. Majewski, Martin Grell, Adv. Mater. 16, 633 (2004)Google Scholar
  44. 44.
    J. Karasawa, Applications of ferroelectrics 2007, in International Symposium on Applications of Ferroelectrics (2007), p. 41.

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© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.YourFriendHachioji, TokyoJapan

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