Stress Effect on a-SiCN:H Waveguide at Terahertz Frequency for Sensing Application Using FDTD Technique

  • Chandra Sekhar Mishra
  • Gopinath PalaiEmail author
Conference paper
Part of the Lecture Notes on Data Engineering and Communications Technologies book series (LNDECT, volume 37)


This article explores that a-SiCN:H-based photonic waveguide at terahertz frequency, which is investigated at wavelength of 632 nm using FDTD technique. The dispersion analysis is applied for computing the reflectance of a-SiCN:H waveguide with the help of finite difference time domain technique. The simulation upshot shows that transmitted intensity fluctuates in zigzag manner with respect to the compressive stress from −250 to −50 MPa at frequency 632 nm.


FDTD Transmitted intensity a-SiCN:H 


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© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringGandhi Institute for Technological Advancement (GITA)BhubaneswarIndia

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