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Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning

  • C. M. Krammel
  • P. M. KoenraadEmail author
  • M. Roy
  • P. A. Maksym
  • Shumin Wang
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 285)

Abstract

The structural properties of highly mismatched III-V semiconductors with small amounts of Bi are still not well understood at the atomic level. In this chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using density functional theory (DFT) calculations. By comparing high-resolution X-STM images with complementary DFT calculations, Bi atoms down to the third monolayer below the InP (110) surface are identified. With this information, the Short-range ordering of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation at the interfaces of an InP/InP\(_{1-x}\)Bi\(_{x}\)/InP quantum well with a Bi concentration of \(2.4~\%\) is discussed.

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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • C. M. Krammel
    • 1
  • P. M. Koenraad
    • 1
    Email author
  • M. Roy
    • 2
  • P. A. Maksym
    • 2
  • Shumin Wang
    • 3
    • 4
  1. 1.Department of Applied PhysicsEindhoven University of TechnologyEindhovenThe Netherlands
  2. 2.Department of Physics and AstronomyUniversity of LeicesterLeicesterUK
  3. 3.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina
  4. 4.Department of Microtechnology and NanoscienceChalmers University of TechnologyGothenburgSweden

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