Screen the Polarization Induced Electric Field Within the MQWs for DUV LEDs
This chapter discusses and presents different designs to screen the polarization level in the quantum wells for -oriented DUV LEDs. By doing so, the quantum confined Stark effect (QCSE) can be decreased. We suggest a simple way to reduce the QCSE by adopting Si-doped quantum barriers. Meanwhile, we also find that DUV LEDs are very sensitive to the polarization polarity, such that if nonpolar, semipolar and nitrogen-polar DUV LED structures are grown, we shall avoid using the p-AlGaN/p-GaN hole injection layer. The p-AlGaN/p-GaN hole injection layer can have remarkably hole depletion effect at the interface for those growth orientations except the  orientation.
- 1.Li X, Sundaram S, Disseix P, Le Gac G, Bouchoule S, Patriarche G, Reveret F, Leymarie J, El Gmili Y, Moudakir T, Genty F, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A (2015) AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Opt Mater Express 5(2):380–392. https://doi.org/10.1364/ome.5.000380CrossRefGoogle Scholar
- 2.Tian K, Chen Q, Chu C, Fang M, Li L, Zhang Y, Bi W, Chen C, Zhang Z-H, Dai J (2018) Investigations on AlGaN-based deep-ultraviolet light-emitting diodes with Si-doped quantum barriers of different doping concentrations. Physica Status Solidi-Rapid Res Lett 12(1):1700346. https://doi.org/10.1002/pssr.201700346CrossRefGoogle Scholar
- 4.Akaike R, Ichikawa S, Funato M, Kawakami Y (2018) AlxGa1–xN-based semipolar deep ultraviolet light-emitting diodes. Appl Phys Express 11, Jun 2018Google Scholar
- 7.Tian K, Chu C, Shao H, Che J, Kou J, Fang M, Zhang Y, Bi W, Zhang Z-H (2018) On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes. Superlattices Microstruct 122:280–285. https://doi.org/10.1016/j.spmi.2018.07.037CrossRefGoogle Scholar