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Multi-junction Solar Cell Based on Efficient III–V InGaP/GaAs with GaInAsP as BSF Layers

  • Priya PandeyEmail author
  • Abhinav Bhatnagar
  • Vijay Janyani
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 546)

Abstract

In a multi-junction solar cell, due to the existence of multiple junctions, generation of photo-generated minority charge carrier increases that improves the efficiency of the device with reference to reduction in recombination current. In this paper, authors have analyzed the performance improvement in a multi-junction solar cell with simulation results in R-soft. Simulation results show maximum efficiency 27.59% for multi-junction solar cell whereas for single junction solar cell it is 11.0259%. In the multi-junction solar cell, open circuit voltage \( V_{oc} \) and short circuit current \( I_{sc} \) are also compared to a single junction solar cell.

Keywords

Multi-junction solar cell Short circuit current density Open circuit voltage BSF layer Quantum efficiency Two diode equivalent circuit 

References

  1. 1.
    Nayak PP, Dutta JP, Mishra GP (2015) Efficient InGaP/GaAs DJ solar cell with double back surface field layer. Eng Sci Technol Int JGoogle Scholar
  2. 2.
    DeMoulin PD, Lundstrom MS, Schwartz RJ (1987) Back-surface field design for n/p GaAs cells solar cells. Sci Technol Appl Econ 20:229Google Scholar
  3. 3.
    Green MA, Emery K, Hishikawa Y, Warta W, Dunlop ED (2012) Solar cell efficiency tables. Prog Photovolt Res Appl 20(12)Google Scholar
  4. 4.
    Standard solar spectra, ASTM G-173-03 (International standard ISO 9845-1, 1992) https://www.pveducation.org/pvcdrom/appendices/standard-solar-spectra
  5. 5.
    Chang ST, Liao MH, Lin WK (2011) Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis. Thin Solid Films 519:5022CrossRefGoogle Scholar
  6. 6.
    DeMoulin PD, Lundstrom MS, Schwartz RJ (1987) Back-surface field design for n/p GaAs cells solar cells. Sci Technol Appl Econ 20:229Google Scholar
  7. 7.
    Liao MH, Chen CH (2010) The investigation of optimal Si-SiGe heterostructure thin-film solar cell with theoretical calculation and quantitative analysisGoogle Scholar
  8. 8.
    Kurtz SR, Faine P, Olson JM (1990) Modeling of two junction, series connected tandem solar cells using top cell thickness as an adjustable parameter. J Appl Phys 68:1890CrossRefGoogle Scholar
  9. 9.
    Biron R, Pahud C, Haug FJ, Escarre J, Soderstrom K, Ballif C (2011) Window layer with p doped silicon oxide for high Voc thin-film silicon n-i-p solar cells. J Appl Phys 110:124511CrossRefGoogle Scholar
  10. 10.
    Liao MH, Chen TC, Chen MJ, Liu CW (2005) Electroluminescence from metal/oxide/strained-Si tunneling diodes. Appl Phys Lett 86:223502CrossRefGoogle Scholar
  11. 11.
    Trupke T, Green MA, Wuerfel P (2002) Improving solar cells by the upconversion of sub-band-gap light. J Appl Phys 92:4117CrossRefGoogle Scholar
  12. 12.
    Brown MR, Goldhammer LJ, Goodelle, GS, Lortz CU, Perron JN, Powe JS, Schwartz JA, Cavicchi BT, Gillanders MS, Krut DD (1997) Proceedings of the 26th IEEE photovoltaic specialists conference. IEEE, New York, pp 805Google Scholar
  13. 13.
    Singh KJ, Sarkar SK (2012) Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modelling using optimized InAlGaP BSF layers. Opt Quant Electron 43(1)CrossRefGoogle Scholar
  14. 14.
    Baur C, Bett W (2005) Modeling of III–V multi-junction cells based on spectrometric characterisation. In: 20th European photovoltaic solar energy conference, Barcelona, 6–10 June 2005Google Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Priya Pandey
    • 1
    Email author
  • Abhinav Bhatnagar
    • 1
  • Vijay Janyani
    • 1
  1. 1.Department of ECEMalaviya National Institute of Technology JaipurJaipurIndia

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