AC Dependence of Electrical Properties of SiOx/ZrO2 Multilayer Nanocomposites with Si Nanocrystals
The following paper presents the method of obtaining silicon nanocrystals in a matrix of zirconium dioxide and the results of measurements of electrical properties. The tested material was produced by alternating vacuum evaporation with SiOx and ZrO2 and then annealed to obtain silicon nanocrystals. The measurement parameters in the function of temperature and frequency were: capacitance, resistance, the angle of phase shift and tangent of dielectric losses. On this basis, and referring to the dimensions of the sample, conductivity was determined as a function of temperature and frequency. Thanks to this, the mechanism of charge transfer and the nature of the material have been proposed.
KeywordsNanocomposites Nanocrystals Conductivity Electrical properties
This research was partially supported by the Polish Ministry of Science and Higher Education as a statute tasks of the Lublin University of Technology, at the Faculty of Electrical Engineering and Computer Science, 8620/E-361/S/2018 (S-28/E/2018), entitled “Researches of electrical, magnetic, thermal and mechanical properties of modern electrotechnical and electronic materials, including nanomaterials and electrical devices and their components, in order to determination of suitability for use in electrical engineering and to increase the efficiency of energy management”.
- 6.Rizal C, Ued Y, Karki BR (2012) Magnetic properties of Fe/Cu Multilayers prepared using pulsed-current electrodeposition. J Nano-Electron Phys 4(1):01001Google Scholar
- 7.Bondariev V, Zukowski P, Luhin V et al (2017) Thermo-gravimetric analysis of the nanocomposite (FeCoZr)x(CaF2)(100-x). High Temp Mater Process 21(4):289–298. https://doi.org/10.1615/HighTempMatProc.2018025484CrossRefGoogle Scholar
- 8.Boiko O (2017) Ferromagnetic alloy—ferroelectric ceramic nanocomposites for nanoelectronics: the influence of a heat treatment on electrical properties. High Temp Mater Process 21(3):251–259. https://doi.org/10.1615/HighTempMatProc.2018025554CrossRefGoogle Scholar
- 11.Kalinin YE, Ponomarenko AT, Sitnikov AV et al (2001) Granular metal-insulator nanocomposites with an amorphous structure. Fiz Khim Obrab Mater 5:14–20Google Scholar
- 19.Mahajan AM, Khairnar AG, Thibeault BJ (2011) Pt-Ti/ALD-Al2O3/p-Si MOS capacitors for future ULSI technology. J Nano-Electron Phys 3(1):647–650Google Scholar
- 21.Ershov AV, Chugrov IA, Tetelbaum DI et al (2013) Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2. Semiconductors 47(4):481–486. https://doi.org/10.1134/S1063782613040064CrossRefGoogle Scholar
- 26.Mudryi AV, Mofidnahai F, Karotki AV et al (2012) Silicon-germanium nanostructures with germanium quantum dots for optoelectronic applications. Devices Methods Meas 1:44–50Google Scholar
- 27.Czarnacka K, Komarov FF (2016) The influence of annealing on the electrical and optical properties of silicon-rich silicon nitride films. In: Proceedings of SPIE photonics applications in astronomy, communications, industry, and high-energy physics experiments 2016, Spie-Int Soc Optical Engineering, 2016, p 10031. https://doi.org/10.1117/12.2249111