Advertisement

Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors

  • A. N. Volkov
  • D. V. AndreevEmail author
  • V. M. Maslovsky
Conference paper
Part of the Lecture Notes in Mechanical Engineering book series (LNME)

Abstract

The paper demonstrates the main physical mechanisms of the surface state generation at the interface Si/SiO2, which are typical for nanosized MOS transistors. We demonstrate the most common model of the surface state generation. One analyzes graphs showing a dependence of lifetime on substrate current (Isub), which are obtained from the literature. We demonstrate a method to determine charge carrier energy participating in the process of surface state generation and a method to ascertain the mechanism of surface state generation in nanosized MOS transistors. We ascertain main parameters of MOS transistors affecting the process of surface state generation.

Keywords

Surface states Si/SiO2 interface MOSFET Si–H bonds MOS transistors lifetime 

References

  1. 1.
    Grasser T (2015) Hot carrier degradation in semiconductor devices. Springer, SwitzerlandCrossRefGoogle Scholar
  2. 2.
    Guerin C, Huard V, Braviax A (2009) General framework about defect creation at the Si/SiO2 interface. J Appl Phys 105:114513CrossRefGoogle Scholar
  3. 3.
    Andreev VV, Bondarenko GG, Maslovsky DV et al (2015) Modification and reduction of defects in thin gate dielectric of MIS devices by injection-thermal and irradiation treatments. Phys Status Solidi C 12(1–2):126–130CrossRefGoogle Scholar
  4. 4.
    Andreev VV, Bondarenko GG, Maslovsky VM et al (2015) Modification of MOS devices by high-field electron injection and arc plasma jet treatment. Acta Phys Pol A 128(5):887–890CrossRefGoogle Scholar
  5. 5.
    Andreev VV, Maslovsky VM, Andreev DV et al (2016) Method of stress and measurement modes for research of thin dielectric films of MIS structures. In: International conference on micro- and nano-electronics, vol 10224. SPIE, Dec 2016, p 1022429Google Scholar
  6. 6.
    Prabhakar M (2002) Characterization and modeling of hot carrier degradation in sub-micron n-MOSFETs. Nashville, TennesseeGoogle Scholar
  7. 7.
    Rafi JM, Campabadal F (2001) Hot-carrier degradation in deep-submicrometer nMOSFET’s: lightly doped drain vs. large angle tilt implanted drain. Solid State Electron 45:1391Google Scholar
  8. 8.
    Cui Z, Liou JJ, Yue Y, Vinson J (2003) Empirical reliability modeling for 0.18-µm MOS devices. Solid State Electron 47:1515–1522CrossRefGoogle Scholar
  9. 9.
    Bravaix A, Guerin C, Goguenheim D et al (2010) Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40 nm CMOS node. In: Proceedings of the IEEE International Reliability Physics Symposium 2010, p 55Google Scholar
  10. 10.
    Guérin C, Huard V, Bravaix A (2007) The energy driven hot-carrier degradation modes in NMOSFETs. IEEE Trans Device Mater Reliability 7(2):225–235CrossRefGoogle Scholar
  11. 11.
    Ivashchenko VI, Pogrebnjak AD, Sobol’ OV et al (2015) The effect of Al target current on the structure and properties of (Nb2Al) N films with an amorphous AlN phase. Tech Phys Lett 41(7):697–700CrossRefGoogle Scholar
  12. 12.
    Pogrebnjak AD, Bondar OV, Abadias G et al (2016) Structural and mechanical properties of NbN and Nb-Si-N films: experiment and molecular dynamics simulations. Ceram Int 42(10):11743–11756CrossRefGoogle Scholar
  13. 13.
    Pogrebnjak AD, Bagdasaryan AA, Yakushchenko IV et al (2014) The structure and properties of high-entropy alloys and nitride coatings based on them. Russ Chem Rev 83(11):1027–1061CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • A. N. Volkov
    • 1
  • D. V. Andreev
    • 2
    Email author
  • V. M. Maslovsky
    • 3
  1. 1.Research Institute of Physical ProblemsZelenogradRussia
  2. 2.Bauman Moscow State Technical UniversityKalugaRussia
  3. 3.Moscow Institute of Physics and Technology (State University)Dolgoprudnyi, Moscow RegionRussia

Personalised recommendations