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Effect of Temperature on Phase Formation in Thin Bilayer Ni/GaAs Films

  • S. V. DukarovEmail author
  • S. I. Petrushenko
  • V. V. Miroshnychenko
  • O. O. Nevgasimov
  • V. N. Sukhov
Conference paper
Part of the Lecture Notes in Mechanical Engineering book series (LNME)

Abstract

The results of a study of the effect of sample condensation conditions and annealing temperature on the phase composition of bilayer Ni/GaAs films are presented. A layer of GaAs was deposited at room temperature and a layer of nickel at different substrate temperatures. The temperature intervals for the existence of a low-temperature amorphous phase and an intermediate phase of the ternary Ni3GaAs system were established by means of electron diffraction studies. The Ni3GaAs phase decomposes into the phases of the binary systems NiAs and γ-Ni3Ga2 with increasing temperature. Annealing of the films or an increase in the temperature of the substrate during their condensation causes a decrease in the crystallization and phase decomposition temperatures.

Keywords

Thin films Metal-semiconductor interface Gallium arsenide 

Notes

Acknowledgements

This study was supported by the Ministry of Education and Science of Ukraine.

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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • S. V. Dukarov
    • 1
    Email author
  • S. I. Petrushenko
    • 1
  • V. V. Miroshnychenko
    • 1
  • O. O. Nevgasimov
    • 1
  • V. N. Sukhov
    • 1
  1. 1.V. N. Karazin Kharkiv National UniversityKharkivUkraine

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