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The Role of a Thin Aluminum Film in the Reconstruction of Silicon’s Near-Surface Layers

  • R. LysEmail author
  • B. Pavlyk
  • D. Slobodzyan
  • J. Cebulski
  • M. Kushlyk
Conference paper
Part of the Lecture Notes in Mechanical Engineering book series (LNME)

Abstract

The effect of a thin film of aluminum on morphology and change in the characteristics of p-type silicon crystals was investigated in the work. It is established that a sprayed metallic film receives the nanosized complexes from the inner part of the crystal to the surface. These defects are effective centers of dislocation-related electroluminescence of structures based on p-Si. Additional elastic deformation (for several hours) of silicon leads to an increase in their concentration. This can be used to increase the efficiency of the luminescence of silicon monocrystals in the infrared region.

Keywords

p-type silicon Dislocation electroluminescence Deformation Near-surface layer 

Notes

Acknowledgement

Slobodzyan D. acknowledge the support of this work provided by the International Visegrad Fund (scholarship no. 51810525).

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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • R. Lys
    • 1
    Email author
  • B. Pavlyk
    • 1
  • D. Slobodzyan
    • 1
    • 2
  • J. Cebulski
    • 2
  • M. Kushlyk
    • 1
    • 3
  1. 1.Department of Sensor and Semiconductor ElectronicsIvan Franko National University of LvivLvivUkraine
  2. 2.Department of Experimental PhysicsUniversity of RzeszówRzeszówPoland
  3. 3.Division of Physics and Technology of Wide-Band-Gap Semiconductor NanostructuresInstitute of Physics, Polish Academy of SciencesWarsawPoland

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