The silicon-on-insulator (SOI) technology provides the higher current driving capability, low power consumptions, reduced SCEs and extensive scaling of the channel length. But SOI-based MOSFETs are weak in thermal stability like self-heating. In this paper, a comparative analysis of asymmetrical double metal double gate (ADMDG) and symmetrical double metal double gate (SDMDG) at the zero-temperature-coefficient (ZTC) bias point is proposed. ZTC is the bias point where the device constraints become free of variation in temperature. ADMDG and SDMDG devices are simulated by 2-D Atlas simulator. 2D-Atlas simulation revealed the figure of merit (FOMs) such as transconductance (gm), output conductance (gd), intrinsic gain (Av), on-current (Ion), off-current (Ioff), on–off current ratio (Ion/Ioff) and cutoff frequency (fT). The simulation results give the presence of inflection point of the devices. The variation of ZTC point for transconductance (ZTCgm) and drain current (ZTCIDS) for ADMDG and SDMDG MOSFETs is compared.
ADMDG SDMDG Gate engineering SCEs Analog RF FOMs
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