Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements
We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, rectification ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V.
KeywordsSchottky diode Graphene Impedance analysis Silicon
This work has been supported by DST, SERB-NPDF, No. PDF/2017/002640. We thank Dr. Sumitra Singh from CSIR-CEERI, Pilani for providing HOPG to the synthesis of graphene.
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