Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements

  • Pramila Mahala
  • Ankita Dixit
  • Navneet Gupta
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 526)


We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, rectification ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V.


Schottky diode Graphene Impedance analysis Silicon 



This work has been supported by DST, SERB-NPDF, No. PDF/2017/002640. We thank Dr. Sumitra Singh from CSIR-CEERI, Pilani for providing HOPG to the synthesis of graphene.


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© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  1. 1.Department of Electrical and Electronics EngineeringBirla Institute of Technology and Science (BITS)PilaniIndia

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